EP 1917683 A4 20081105 - POWER SEMICONDUCTOR DEVICE WITH INTERCONNECTED GATE TRENCHES
Title (en)
POWER SEMICONDUCTOR DEVICE WITH INTERCONNECTED GATE TRENCHES
Title (de)
STROMHALBLEITERVORRICHTUNG MIT VERBUNDENEN GATE-GRÄBEN
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR DE PUISSANCE COMPRENANT DES TRANCHEES DE GRILLE INTERCONNECTEES
Publication
Application
Priority
- US 2006032060 W 20060816
- US 70902005 P 20050817
- US 50474006 A 20060815
Abstract (en)
[origin: WO2007022316A2] A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches.
IPC 8 full level
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01)
CPC (source: EP US)
H01L 29/4238 (2013.01 - EP); H01L 29/7811 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/407 (2013.01 - EP); H01L 29/41766 (2013.01 - EP); H01L 29/4236 (2013.01 - EP); H01L 29/42368 (2013.01 - EP); H01L 29/42372 (2013.01 - EP); H01L 29/7397 (2013.01 - EP)
Citation (search report)
- [X] EP 1351313 A2 20031008 - SILICONIX INC [US]
- [X] WO 0042665 A1 20000720 - FRAUNHOFER GES FORSCHUNG [DE], et al
- [A] JP H01192174 A 19890802 - HITACHI LTD
- [A] US 6309929 B1 20011030 - HSU CHIH-WEI [TW], et al
- See references of WO 2007022316A2
Citation (examination)
- JP H10214968 A 19980811 - HITACHI LTD, et al
- US 2004173844 A1 20040909 - WILLIAMS RICHARD K [US], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2007022316 A2 20070222; WO 2007022316 A3 20070712; EP 1917683 A2 20080507; EP 1917683 A4 20081105; JP 2009505433 A 20090205; TW 200713430 A 20070401; TW I317971 B 20091201
DOCDB simple family (application)
US 2006032060 W 20060816; EP 06801678 A 20060816; JP 2008527120 A 20060816; TW 95130109 A 20060816