Global Patent Index - EP 1921674 A4

EP 1921674 A4 20100825 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title (en)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title (de)

HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG

Title (fr)

DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION CORRESPONDANT

Publication

EP 1921674 A4 20100825 (EN)

Application

EP 06782563 A 20060809

Priority

  • JP 2006315747 W 20060809
  • JP 2005232452 A 20050810
  • JP 2005232428 A 20050810

Abstract (en)

[origin: US2007181983A1] A method of manufacturing a semiconductor device 28 in which a plating mask 38, 39 having a noble metal plating layer 35 as an uppermost layer is formed at a predetermined portion on an obverse surface side or a reverse surface side of a leadframe material 10 , and the leadframe material 10 is consecutively subjected to etching by using the plating mask 38, 39 as a resist mask, so as to form external connection terminal portions 22 which electrically communicate with a semiconductor element 18 disposed in an interior of an encapsulating resin 21 , and which project downwardly. Base metal plating or noble metal plating 33 exhibiting etching solution resistance is provided as a lowermost layer of the plating mask 38, 39.

IPC 8 full level

H01L 23/12 (2006.01); H01L 23/50 (2006.01)

CPC (source: EP KR US)

H01L 21/4832 (2013.01 - EP US); H01L 21/6835 (2013.01 - EP US); H01L 23/3107 (2013.01 - EP US); H01L 23/3114 (2013.01 - EP US); H01L 23/48 (2013.01 - KR); H01L 23/49548 (2013.01 - EP US); H01L 23/49582 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 24/81 (2013.01 - EP US); H01L 24/85 (2013.01 - EP US); H01L 2221/68377 (2013.01 - EP US); H01L 2224/0401 (2013.01 - EP US); H01L 2224/05599 (2013.01 - EP US); H01L 2224/16 (2013.01 - EP US); H01L 2224/16245 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/484 (2013.01 - EP US); H01L 2224/81801 (2013.01 - EP US); H01L 2224/85439 (2013.01 - EP US); H01L 2224/85444 (2013.01 - EP US); H01L 2224/85447 (2013.01 - EP US); H01L 2224/85464 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01028 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/0105 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/01083 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/15311 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H01L 2924/18165 (2013.01 - EP US)

C-Set (source: EP US)

  1. H01L 2224/484 + H01L 2924/00014
  2. H01L 2224/48091 + H01L 2924/00014
  3. H01L 2924/00014 + H01L 2224/05599
  4. H01L 2924/00014 + H01L 2224/45099
  5. H01L 2924/181 + H01L 2924/00012

Citation (search report)

Designated contracting state (EPC)

DE FR IT NL

DOCDB simple family (publication)

US 2007181983 A1 20070809; US 8003444 B2 20110823; EP 1921674 A1 20080514; EP 1921674 A4 20100825; KR 101089449 B1 20111207; KR 20080038121 A 20080502; WO 2007018237 A1 20070215

DOCDB simple family (application)

US 50132506 A 20060809; EP 06782563 A 20060809; JP 2006315747 W 20060809; KR 20087000508 A 20060809