EP 1921674 A4 20100825 - SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Title (en)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Title (de)
HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
DISPOSITIF À SEMI-CONDUCTEURS ET PROCÉDÉ DE FABRICATION CORRESPONDANT
Publication
Application
Priority
- JP 2006315747 W 20060809
- JP 2005232452 A 20050810
- JP 2005232428 A 20050810
Abstract (en)
[origin: US2007181983A1] A method of manufacturing a semiconductor device 28 in which a plating mask 38, 39 having a noble metal plating layer 35 as an uppermost layer is formed at a predetermined portion on an obverse surface side or a reverse surface side of a leadframe material 10 , and the leadframe material 10 is consecutively subjected to etching by using the plating mask 38, 39 as a resist mask, so as to form external connection terminal portions 22 which electrically communicate with a semiconductor element 18 disposed in an interior of an encapsulating resin 21 , and which project downwardly. Base metal plating or noble metal plating 33 exhibiting etching solution resistance is provided as a lowermost layer of the plating mask 38, 39.
IPC 8 full level
H01L 23/12 (2006.01); H01L 23/50 (2006.01)
CPC (source: EP KR US)
H01L 21/4832 (2013.01 - EP US); H01L 21/6835 (2013.01 - EP US); H01L 23/3107 (2013.01 - EP US); H01L 23/3114 (2013.01 - EP US); H01L 23/48 (2013.01 - KR); H01L 23/49548 (2013.01 - EP US); H01L 23/49582 (2013.01 - EP US); H01L 24/48 (2013.01 - EP US); H01L 24/81 (2013.01 - EP US); H01L 24/85 (2013.01 - EP US); H01L 2221/68377 (2013.01 - EP US); H01L 2224/0401 (2013.01 - EP US); H01L 2224/05599 (2013.01 - EP US); H01L 2224/16 (2013.01 - EP US); H01L 2224/16245 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48247 (2013.01 - EP US); H01L 2224/484 (2013.01 - EP US); H01L 2224/81801 (2013.01 - EP US); H01L 2224/85439 (2013.01 - EP US); H01L 2224/85444 (2013.01 - EP US); H01L 2224/85447 (2013.01 - EP US); H01L 2224/85464 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01028 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/0105 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/01083 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/15311 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H01L 2924/18165 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
- [XI] US 6551859 B1 20030422 - LEE SHAW WEI [US], et al
- [XA] JP S59208756 A 19841127 - SONY CORP
- [A] US 6451627 B1 20020917 - COFFMAN SAMUEL L [US]
- See references of WO 2007018237A1
Designated contracting state (EPC)
DE FR IT NL
DOCDB simple family (publication)
US 2007181983 A1 20070809; US 8003444 B2 20110823; EP 1921674 A1 20080514; EP 1921674 A4 20100825; KR 101089449 B1 20111207; KR 20080038121 A 20080502; WO 2007018237 A1 20070215
DOCDB simple family (application)
US 50132506 A 20060809; EP 06782563 A 20060809; JP 2006315747 W 20060809; KR 20087000508 A 20060809