EP 1924085 A3 20120222 - Solid-state image sensing device
Title (en)
Solid-state image sensing device
Title (de)
Festkörperbilderfassungsvorrichtung
Title (fr)
Dispositif de détection d'image à semi-conducteurs
Publication
Application
Priority
JP 2006307257 A 20061113
Abstract (en)
[origin: EP1924085A2] According to an aspect of the invention, there is provided a solid-state image sensing device characterized by including a pixel section (1) in which cells (11) are two-dimensionally arrayed in rows and columns on a semiconductor substrate, each cell including a photoelectric conversion unit, a reading circuit which reads out, to a detection unit, signal charges obtained by photoelectrically converting incident light by the photoelectric conversion unit, an amplifying circuit which amplifies and outputs a voltage corresponding to the signal charges stored in the detection unit, and a reset circuit which resets the signal charges of the detection unit, an exposure time control circuit (13, 14) which controls an exposure time during which the photoelectric conversion unit performs photoelectric conversion, and controls the exposure time to be equal for all cells, an A/D conversion circuit (3) which A/D-converts a signal output from the pixel section by changing a resolution of a signal level, line memories (5, 6) which store a signal converted by the A/D conversion circuit, and a signal processing circuit (20) which processes output signals from the line memories to have a linear gradient with respect to an optical input signal amount by controlling an amplification factor in accordance with a resolution of a pixel output signal after the A/D conversion circuit.
IPC 8 full level
H04N 5/335 (2011.01); H01L 27/146 (2006.01); H04N 5/243 (2006.01); H04N 5/353 (2011.01); H04N 5/355 (2011.01); H04N 5/369 (2011.01); H04N 5/374 (2011.01); H04N 5/3745 (2011.01); H04N 5/376 (2011.01); H04N 5/378 (2011.01)
CPC (source: EP US)
H04N 23/76 (2023.01 - EP US); H04N 25/575 (2023.01 - EP US); H04N 25/583 (2023.01 - EP US); H04N 25/75 (2023.01 - US); H04N 25/78 (2023.01 - EP); H01L 27/14643 (2013.01 - EP US); H04N 25/77 (2023.01 - EP US)
Citation (search report)
- [X] US 2006219866 A1 20061005 - EGAWA YOSHITAKA [JP], et al
- [A] US 2002080263 A1 20020627 - KRYMSKI ALEXANDER I [US]
- [A] US 2002067303 A1 20020606 - LEE KANG-JIN [KR], et al
- [A] US 5920274 A 19990706 - GOWDA SUDHIR MUNISWAMY [US], et al
- [XA] SASAKI M ET AL: "A wide dynamic range CMOS image sensor with multiple short-time exposures", PROCEEDINGS OF IEEE SENSORS 2004 : [IEEE SENSORS 2004 CONFERENCE] ; OCTOBER 24 - 27, VIENNA UNIVERSITY OF TECHNOLOGY, VIENNA, AUSTRIA, IEEE SERVICE CENTER, PISCATAWAY, NJ, 24 October 2004 (2004-10-24), pages 967 - 972, XP010793568, ISBN: 978-0-7803-8692-1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
EP 1924085 A2 20080521; EP 1924085 A3 20120222; CN 101321238 A 20081210; CN 101321238 B 20130731; JP 2008124842 A 20080529; JP 4843461 B2 20111221; TW 200828999 A 20080701; TW I357260 B 20120121; US 2008218619 A1 20080911; US 2011228130 A1 20110922; US 2011228152 A1 20110922; US 7969484 B2 20110628; US 8502886 B2 20130806; US 8525901 B2 20130903
DOCDB simple family (application)
EP 07021905 A 20071112; CN 200710185784 A 20071113; JP 2006307257 A 20061113; TW 96142049 A 20071107; US 201113151089 A 20110601; US 201113151093 A 20110601; US 93846207 A 20071112