Global Patent Index - EP 1928038 A3

EP 1928038 A3 20090701 - Organic thin film transistor with dual layer electrodes

Title (en)

Organic thin film transistor with dual layer electrodes

Title (de)

Organischer Dünnfilmtransistor mit Doppelschichtelektroden

Title (fr)

Transistor à couche organique mince avec électrodes à deux couches

Publication

EP 1928038 A3 20090701 (EN)

Application

EP 07121765 A 20071128

Priority

US 56443806 A 20061129

Abstract (en)

[origin: EP1928038A2] A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.

IPC 8 full level

H10K 99/00 (2023.01)

CPC (source: EP KR US)

H01L 29/458 (2013.01 - KR); H10K 10/464 (2023.02 - KR); H10K 10/466 (2023.02 - KR); H10K 10/472 (2023.02 - KR); H10K 10/84 (2023.02 - EP KR US); H10K 85/1135 (2023.02 - KR); H10K 10/464 (2023.02 - EP US); H10K 10/466 (2023.02 - EP US); H10K 10/472 (2023.02 - EP US); H10K 85/1135 (2023.02 - EP US)

Citation (search report)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

EP 1928038 A2 20080604; EP 1928038 A3 20090701; EP 1928038 B1 20130529; CA 2612033 A1 20080529; CA 2612033 C 20130910; CN 101192623 A 20080604; JP 2008141197 A 20080619; KR 101474934 B1 20141219; KR 20080048960 A 20080603; TW 200835010 A 20080816; US 2008121869 A1 20080529; US 7923718 B2 20110412

DOCDB simple family (application)

EP 07121765 A 20071128; CA 2612033 A 20071122; CN 200710196147 A 20071128; JP 2007304164 A 20071126; KR 20070122019 A 20071128; TW 96145066 A 20071128; US 56443806 A 20061129