Global Patent Index - EP 1938364 A4

EP 1938364 A4 20110518 - A METHOD FOR FABRICATING NANOGAP AND NANOGAP SENSOR

Title (en)

A METHOD FOR FABRICATING NANOGAP AND NANOGAP SENSOR

Title (de)

VERFAHREN ZUR ERZEUGUNG EINES NANOSPALTS UND NANOSPALTSENSOR

Title (fr)

PROCEDE POUR FABRIQUER UN NANO-INTERVALLE ET CAPTEUR DE NANO-INTERVALLE

Publication

EP 1938364 A4 20110518 (EN)

Application

EP 06783773 A 20060905

Priority

  • KR 2006003517 W 20060905
  • KR 20050099585 A 20051021
  • KR 20060072981 A 20060802

Abstract (en)

[origin: WO2007046582A1] The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a method of fabricating a nanogap and a nanogap sensor, which can be realized by an anisotropic etching using a semiconductor manufacturing process. According to the method of present invention, the nanogap and nanogap sensor can be simply and cheaply produced in large quantities.

IPC 8 full level

B81C 1/00 (2006.01)

CPC (source: EP)

B81C 1/00087 (2013.01)

Citation (search report)

  • [A] WO 2004077503 A2 20040910 - HARVARD COLLEGE [US]
  • [A] WO 2004078640 A1 20040916 - UNIV DELFT TECH [NL], et al
  • [A] US 2003211502 A1 20031113 - SAUER JON R [US], et al
  • [A] EP 1366860 A1 20031203 - ASIA PACIFIC MICROSYSTEM INC [TW]
  • [XI] HASHIOKA S ET AL: "FABRICATION TECHNIQUE FOR PREPARING NANOGAP ELECTRODES BY CONVENTIONAL SILICON PROCESSES", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 44, no. 6A, 1 June 2005 (2005-06-01), pages 4213 - 4215, XP001502351, ISSN: 0021-4922, DOI: 10.1143/JJAP.44.4213
  • [A] STORM A J ET AL: "FABRICATION OF SOLID-STATE NANOPORES WITH SINGLE-NANOMETRE PRECISION", NATURE MATERIALS, NATURE PUBLISHING GROUP, LONDON, GB, vol. 2, no. 8, 13 July 2003 (2003-07-13), pages 537 - 540, XP008046585, ISSN: 1476-4660, DOI: 10.1038/NMAT941
  • See references of WO 2007046582A1

Citation (examination)

SHINGI HASHIOKA ET AL: "Fabrication Technique for Preparing Nanogap Electrodes by Conventional Silicon Processes", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 44, no. 6A, 1 June 2005 (2005-06-01), JP, pages 4213 - 4215, XP055395549, ISSN: 0021-4922, DOI: 10.1143/JJAP.44.4213

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2007046582 A1 20070426; EP 1938364 A1 20080702; EP 1938364 A4 20110518

DOCDB simple family (application)

KR 2006003517 W 20060905; EP 06783773 A 20060905