EP 1946377 A2 20080723 - SIC-PN POWER DIODE
Title (en)
SIC-PN POWER DIODE
Title (de)
SIC-PN-LEISTUNGSDIODE
Title (fr)
DIODE DE PUISSANCE SIC-PN
Publication
Application
Priority
- EP 2006066482 W 20060919
- DE 102005046707 A 20050929
Abstract (en)
[origin: WO2007036456A2] The invention relates to an integrated vertical SiC-PN power diode comprising a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of said first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of said first conductivity type, said intermediate layer being arranged inside the drift zone, comprising a higher doping concentration than the drift zone, and dividing the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. The invention also relates to a circuit arrangement comprising such SiC-PN power diodes.
IPC 8 full level
H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP KR US)
H01L 29/1608 (2013.01 - EP US); H01L 29/861 (2013.01 - EP KR US); H01L 29/36 (2013.01 - EP US)
Citation (search report)
See references of WO 2007036456A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2007036456 A2 20070405; WO 2007036456 A3 20070621; DE 102005046707 B3 20070503; EP 1946377 A2 20080723; KR 20080070638 A 20080730; US 2008217627 A1 20080911; US 7646026 B2 20100112
DOCDB simple family (application)
EP 2006066482 W 20060919; DE 102005046707 A 20050929; EP 06793619 A 20060919; KR 20087010300 A 20080429; US 8829806 A 20060919