Global Patent Index - EP 1950794 A4

EP 1950794 A4 20100331 - OPTICAL CHARACTERISTIC MEASURING METHOD, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, INSPECTING APPARATUS AND MEASURING METHOD

Title (en)

OPTICAL CHARACTERISTIC MEASURING METHOD, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, INSPECTING APPARATUS AND MEASURING METHOD

Title (de)

VERFAHREN ZUR MESSUNG EINER OPTISCHEN KENNGRÖSSE, BELICHTUNGSVERFAHREN, BAUELEMENTE-HERSTELLUNGSVERFAHREN, UNTERSUCHUNGSVORRICHTUNG UND MESSVERFAHREN

Title (fr)

PROCÉDÉ DE MESURE DE CARACTÉRISTIQUE OPTIQUE, PROCÉDÉ D EXPOSITION, PROCEDE DE FABRICATION DE DISPOSITIF, APPAREIL D INSPECTION ET PROCEDE DE MESURE

Publication

EP 1950794 A4 20100331 (EN)

Application

EP 06811544 A 20061010

Priority

  • JP 2006320232 W 20061010
  • JP 2005294858 A 20051007

Abstract (en)

[origin: EP1950794A1] For a plurality of divided areas on a wafer that is exposed by generating measurement pattern images, a predetermined statistic that includes the deviation of the luminance value of each pixel included in imaging data obtained by the imaging with respect to a predetermined reference value is computed, for example, the variance is computed, and optical characteristics of a projection optical system are obtained based on a computation result of the computed statistic of each of the divided areas (steps 504, 506, 512 and 514). Therefore, the optical characteristics can be measured with good repeatability even by a measurement device such as a microscope having a lower resolution compared with the SEM or the like, for example, an alignment sensor by an image-forming method of an exposure apparatus or the like.

IPC 8 full level

H01L 21/027 (2006.01); G03F 7/207 (2006.01)

CPC (source: EP KR US)

G01M 11/0264 (2013.01 - EP KR US); G01M 11/0271 (2013.01 - EP KR US); G03F 7/70516 (2013.01 - KR); G03F 7/70591 (2013.01 - KR); G03F 7/706 (2013.01 - EP KR US); G03F 7/70641 (2013.01 - EP KR US)

Citation (search report)

Citation (examination)

US 6310680 B1 20011030 - TANIGUCHI TETSUO [JP]

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

EP 1950794 A1 20080730; EP 1950794 A4 20100331; JP WO2007043535 A1 20090416; KR 20080059572 A 20080630; TW 200731333 A 20070816; US 2008208499 A1 20080828; WO 2007043535 A1 20070419

DOCDB simple family (application)

EP 06811544 A 20061010; JP 2006320232 W 20061010; JP 2007539951 A 20061010; KR 20087009179 A 20080417; TW 95137468 A 20061011; US 7886408 A 20080407