Global Patent Index - EP 1952449 A4

EP 1952449 A4 20110629 - OPTICAL DEVICES FEATURING TEXTURED SEMICONDUCTOR LAYERS

Title (en)

OPTICAL DEVICES FEATURING TEXTURED SEMICONDUCTOR LAYERS

Title (de)

OPTISCHE BAUELEMENTE MIT TEXTURIERTEN HALBLEITERSCHICHTEN

Title (fr)

DISPOSITIFS OPTIQUES COMPRENANT DES COUCHES A SEMI-CONDUCTEURS TEXTUREES

Publication

EP 1952449 A4 20110629 (EN)

Application

EP 06827176 A 20061031

Priority

  • US 2006042483 W 20061031
  • US 73203405 P 20051031

Abstract (en)

[origin: WO2007053624A2] A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

IPC 1-7

H01L 33/06; H01L 33/24; H01L 33/08; H01L 33/32

IPC 8 full level

H01L 21/00 (2006.01); H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01)

CPC (source: EP)

H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 21/0237 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/0254 (2013.01); H01L 33/08 (2013.01); H01L 33/32 (2013.01)

Citation (search report)

  • [XPL] US 2005242364 A1 20051103 - MOUSTAKAS THEODORE D [US], et al
  • [XAI] US 2005082544 A1 20050421 - NARUKAWA YUKIO [JP], et al
  • [I] US 2005056850 A1 20050317 - TAKI TETSUYA [JP]
  • [XI] CABALU J S ET AL: "Nitride LEDs based on flat and "wrinkled" quantum wells", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG. USA, vol. 5732, no. 1, 25 March 2005 (2005-03-25), pages 185 - 196, XP002635688, ISSN: 0277-786X, DOI: 10.1117/12.588360
  • [A] BHATTACHARYYA A ET AL: "Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 251, no. 1-4, 1 April 2003 (2003-04-01), pages 487 - 493, XP004416295, ISSN: 0022-0248, DOI: 10.1016/S0022-0248(02)02433-8
  • See references of WO 2007053624A2

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2007053624 A2 20070510; WO 2007053624 A3 20090430; CA 2627880 A1 20070510; CN 101506937 A 20090812; EP 1952449 A2 20080806; EP 1952449 A4 20110629; JP 2009515340 A 20090409

DOCDB simple family (application)

US 2006042483 W 20061031; CA 2627880 A 20061031; CN 200680049610 A 20061031; EP 06827176 A 20061031; JP 2008538970 A 20061031