Global Patent Index - EP 1953740 A3

EP 1953740 A3 20081105 - Tunnel magnetoresistence effect film and magnetic device

Title (en)

Tunnel magnetoresistence effect film and magnetic device

Title (de)

Tunnelmagnetwiderstands-Effektschicht und magnetische Vorrichtung

Title (fr)

Film à effet de magnétorésistance de tunnel et dispositif magnétique

Publication

EP 1953740 A3 20081105 (EN)

Application

EP 07122015 A 20071130

Priority

JP 2007022160 A 20070131

Abstract (en)

[origin: EP1953740A2] The tunnel magnetoresistance effect film is a highly practical tunnel magnetoresistance effect film having a characteristic of serviceable negative MR ratio, which can be used at room temperature. The tunnel magnetoresistance effect film comprises: a tunnel barrier layer (13); and magnetic layers sandwiching the tunnel barrier layer (13). One of the magnetic layers is composed of FeN (12).

IPC 8 full level

G11B 5/39 (2006.01)

CPC (source: EP KR US)

B82Y 10/00 (2013.01 - EP US); B82Y 25/00 (2013.01 - EP US); G01R 33/093 (2013.01 - EP US); G01R 33/098 (2013.01 - EP US); G11B 5/127 (2013.01 - KR); G11B 5/33 (2013.01 - KR); G11B 5/39 (2013.01 - KR); G11B 5/3906 (2013.01 - EP US); G11B 5/3909 (2013.01 - EP US); G11C 11/16 (2013.01 - EP US)

Citation (search report)

  • [XA] US 6108177 A 20000822 - GILL HARDAYAL SINGH [US]
  • [XA] US 2006039092 A1 20060223 - GILL HARDAYAL S [US]
  • [A] TAKAHASHI K S ET AL: "INVERSE TUNNEL MAGNETORESISTANCE IN ALL-PEROVSKITE JUNCTIONS OF LA0.7SR0.3MNO3/SRTIO3/SRRUO3", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 67, no. 9, 1 March 2003 (2003-03-01), pages 94413 - 01, XP001159379, ISSN: 0163-1829

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

EP 1953740 A2 20080806; EP 1953740 A3 20081105; CN 100583482 C 20100120; CN 101237023 A 20080806; JP 2008192634 A 20080821; KR 20080071885 A 20080805; US 2008180857 A1 20080731

DOCDB simple family (application)

EP 07122015 A 20071130; CN 200710159763 A 20071221; JP 2007022160 A 20070131; KR 20070132261 A 20071217; US 99830507 A 20071129