EP 1957688 A2 20080820 - SMALL VOLUME SYMMETRIC FLOW SINGLE WAFER ALD APPARATUS
Title (en)
SMALL VOLUME SYMMETRIC FLOW SINGLE WAFER ALD APPARATUS
Title (de)
KLEINRÄUMIGE ALD-VORRICHTUNG FÜR EINZELWAFER MIT SYMMETRISCHEM FLUSS
Title (fr)
APPAREIL DE DEPOT DE COUCHE ATOMIQUE (ALD) A TRANCHE UNIQUE ET A ECOULEMENT SYMETRIQUE DE PETIT VOLUME
Publication
Application
Priority
- US 2006061201 W 20061122
- DE 102005056326 A 20051122
- US 82004206 P 20060721
Abstract (en)
[origin: WO2007076195A2] An ALD reactor chamber contains a vertically moveable heater-susceptor having an attached annular attached flow ring conduit at its perimeter, which conduit has an external surface at its edge that isolates the outer space of the reactor above a wafer and below the wafer to the bottom of the flow ring when the heater-susceptor is in its process position. When the susceptor is in the process position, the outer edge of the flow ring is placed in proximity to an annular ring attached to a Hd of the reactor and together the ring and conduit form a tongue-in-groove (TIG) configuration. In some cases, the TIG design may have a staircase contour (SC), thereby limiting diffusion-backflow of downstream gases to the outer space of the reactor.
IPC 8 full level
C23C 16/00 (2006.01)
CPC (source: EP KR)
C23C 16/45508 (2013.01 - EP KR); C23C 16/45544 (2013.01 - EP KR); C23C 16/45591 (2013.01 - EP KR); C23C 16/458 (2013.01 - KR); C23C 16/4585 (2013.01 - EP KR)
Citation (search report)
See references of WO 2007076195A2
Designated contracting state (EPC)
DE FR IT NL
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2007076195 A2 20070705; WO 2007076195 A3 20080124; EP 1957688 A2 20080820; JP 2009529223 A 20090813; KR 101505497 B1 20150324; KR 20080075179 A 20080814
DOCDB simple family (application)
US 2006061201 W 20061122; EP 06848792 A 20061122; JP 2008542517 A 20061122; KR 20087014036 A 20061122