EP 1966800 A2 20080910 - BODY EFFECT SENSING METHOD FOR NON-VOLATILE MEMORIES
Title (en)
BODY EFFECT SENSING METHOD FOR NON-VOLATILE MEMORIES
Title (de)
KÖRPERWIRKUNGSMESSVERFAHREN FÜR NICHTFLÜCHTIGE SPEICHER
Title (fr)
TECHNIQUES DE DETECTION DE SUBSTITUTION POUR MEMOIRES REMANENTES
Publication
Application
Priority
- US 2006062513 W 20061221
- US 32199605 A 20051228
- US 32091705 A 20051228
Abstract (en)
[origin: WO2007076451A2] The present invention presents a scheme for sensing memory cells. Selected memory cells are discharged through their channels to ground and then have a voltage level placed on the traditional source and another voltage level placed on the control gate, and allowing the cell bit line to charge up. The bit line of the memory cell will then charge up until the bit line voltage becomes sufficiently high to shut off any further cell conduction. The rise of the bit line voltage will occur at a rate and to a level dependent upon the data state of the cell, and the cell will then shut off when the bit line reaches a high enough level such that the body effect affected memory cell threshold is reached, at which point the current essentially shuts off. A particular embodiment performs multiple such sensing sub-operations, each with a different control gate voltage, but with multiple states being sensed in each operation by charging the previously discharged cells up through their source.
IPC 8 full level
G11C 11/56 (2006.01)
CPC (source: EP KR)
G11C 11/5642 (2013.01 - EP); G11C 16/0483 (2013.01 - EP); G11C 16/12 (2013.01 - KR); G11C 16/26 (2013.01 - KR); G11C 16/30 (2013.01 - KR); G11C 16/34 (2013.01 - KR); G11C 7/1048 (2013.01 - EP); G11C 2211/565 (2013.01 - EP)
Citation (search report)
See references of WO 2007076451A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2007076451 A2 20070705; WO 2007076451 A3 20070920; EP 1966800 A2 20080910; JP 2009522706 A 20090611; JP 4568365 B2 20101027; KR 101357068 B1 20140203; KR 20080096644 A 20081031; TW 200741718 A 20071101; TW I323464 B 20100411
DOCDB simple family (application)
US 2006062513 W 20061221; EP 06848820 A 20061221; JP 2008548823 A 20061221; KR 20087015402 A 20061221; TW 95149528 A 20061228