EP 1966819 A1 20080910 - PRODUCTION OF A TRANSISTOR GATE ON A MULTIBRANCH CHANNEL STRUCTURE AND MEANS FOR ISOLATING THIS GATE FROM THE SOURCE AND DRAIN REGIONS
Title (en)
PRODUCTION OF A TRANSISTOR GATE ON A MULTIBRANCH CHANNEL STRUCTURE AND MEANS FOR ISOLATING THIS GATE FROM THE SOURCE AND DRAIN REGIONS
Title (de)
HERSTELLUNG EINES TRANSISTOR-GATES AUF EINER MEHRZWEIG-KANALSTRUKTUR UND MITTEL ZUM ISOLIEREN DIESES GATES VON DEN SOURCE- UND DRAIN-REGIONEN
Title (fr)
REALISATION SUR UNE STRUCTURE DE CANAL A PLUSIEURS BRANCHES D'UNE GRILLE DE TRANSISTOR ET DE MOYENS POUR ISOLER CETTE GRILLE DES REGIONS DE SOURCE ET DE DRAIN
Publication
Application
Priority
- EP 2006070255 W 20061228
- FR 0554151 A 20051230
Abstract (en)
[origin: FR2895835A1] A device has an etched thin-film multilayer comprising two blocks (210, 230) resting on a substrate (200) in which source and drain regions are formed, respectively. Semiconductor bars (220a, 220b) connecting a zone of one block to another zone of another block form a multi-branch transistor channel. A gate surrounding the bars is located between the blocks and is contact with insulating spacers (237a, 237b) in contact with the walls of the blocks. The gate is separated from the blocks by the insulating spacers. An independent claim is also included for forming a microelectronic device.
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP US)
H01L 29/42392 (2013.01 - EP US); H01L 29/66772 (2013.01 - EP US); H01L 29/78696 (2013.01 - EP US)
Citation (search report)
See references of WO 2007077194A1
Citation (examination)
- FR 2861501 A1 20050429 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
- US 2003215989 A1 20031120 - KIM SANG-SU [KR], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2895835 A1 20070706; FR 2895835 B1 20080509; EP 1966819 A1 20080910; JP 2009522760 A 20090611; US 2008277691 A1 20081113; US 2011281412 A1 20111117; US 8492232 B2 20130723; WO 2007077194 A1 20070712
DOCDB simple family (application)
FR 0554151 A 20051230; EP 06830845 A 20061228; EP 2006070255 W 20061228; JP 2008547972 A 20061228; US 201113190125 A 20110725; US 9741106 A 20061228