EP 1974375 A2 20081001 - GERMANIUM ON GLASS AND GLASS-CERAMIC STRUCTURES
Title (en)
GERMANIUM ON GLASS AND GLASS-CERAMIC STRUCTURES
Title (de)
GERMANIUM-AUF-GLAS- UND GLAS-KERAMIK-STRUKTUREN
Title (fr)
GERMANIUM SUR DES STRUCTURES EN VERRE OU VERRE-CERAMIQUE
Publication
Application
Priority
- US 2006049272 W 20061222
- US 75593406 P 20060103
- US 41573206 A 20060501
Abstract (en)
[origin: WO2007079077A2] A semiconductor-on-insulator structure including first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300°C) which is within the range of +/- 20x10<SUP>-7</SUP>/°C of the linear coefficient thermal of expansion of the germanium first layer.
IPC 8 full level
C03C 3/04 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01)
CPC (source: EP KR US)
C03C 3/062 (2013.01 - EP); C03C 3/068 (2013.01 - EP); C03C 3/085 (2013.01 - EP); C03C 3/087 (2013.01 - EP); C03C 3/091 (2013.01 - EP); C03C 3/095 (2013.01 - EP); C03C 27/00 (2013.01 - EP); H01L 21/20 (2013.01 - KR); H01L 21/76254 (2013.01 - EP); H01L 27/1203 (2013.01 - US); H01L 27/1214 (2013.01 - EP); H01L 29/78603 (2013.01 - EP); H01L 29/78684 (2013.01 - EP)
Citation (search report)
See references of WO 2007079077A2
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 2007079077 A2 20070712; WO 2007079077 A3 20071213; CN 101371348 A 20090218; CN 101371348 B 20111116; EP 1974375 A2 20081001; JP 2009528673 A 20090806; KR 20080092403 A 20081015
DOCDB simple family (application)
US 2006049272 W 20061222; CN 200680052647 A 20061222; EP 06849096 A 20061222; JP 2008549505 A 20061222; KR 20087019021 A 20080801