EP 1977442 B1 20111123 - METHOD FOR FABRICATING A SEMICONDUCTOR COMPONENT HAVING REGIONS WITH DIFFERENT LEVELS OF DOPING
Title (en)
METHOD FOR FABRICATING A SEMICONDUCTOR COMPONENT HAVING REGIONS WITH DIFFERENT LEVELS OF DOPING
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT UNTERSCHIEDLICH STARK DOTIERTEN BEREICHEN
Title (fr)
PROCÉDÉ DE FABRICATION D'UN COMPOSANT SEMI-CONDUCTEUR AVEC DES ZONES DOPÉES À DES DEGRÉS DIFFÉREMMENT FORTS
Publication
Application
Priority
- EP 2007000463 W 20070119
- DE 102006003283 A 20060123
Abstract (en)
[origin: DE102006003283A1] The method involves forming a layer (58), which inhibits diffusion of a dopant. The dopant is penetrated into the layer on a portion of the surface of a semiconductor component material (50). A diffusion-inhibiting layer in a highly doped region (62) is partially removed. The dopant source (66) is formed on the diffusion-inhibiting layer in the highly doped region and the dopant is diffused from the dopant source into the semiconductor component material. The dopant is made up of phosphorus or boron.
IPC 8 full level
H01L 21/225 (2006.01); H01L 27/142 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01)
CPC (source: EP KR US)
H01L 21/2255 (2013.01 - EP US); H01L 21/265 (2013.01 - KR); H01L 31/04 (2013.01 - KR); H01L 31/068 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2009017606 A1 20090115; AT E535011 T1 20111215; CN 101379595 A 20090304; CN 101379595 B 20110511; DE 102006003283 A1 20070726; EP 1977442 A1 20081008; EP 1977442 B1 20111123; KR 20080097413 A 20081105; WO 2007082760 A1 20070726
DOCDB simple family (application)
US 17808708 A 20080723; AT 07702893 T 20070119; CN 200780004647 A 20070119; DE 102006003283 A 20060123; EP 07702893 A 20070119; EP 2007000463 W 20070119; KR 20087018757 A 20080730