EP 1977442 B1 20111123 - METHOD FOR FABRICATING A SEMICONDUCTOR COMPONENT HAVING REGIONS WITH DIFFERENT LEVELS OF DOPING
Title (en)
METHOD FOR FABRICATING A SEMICONDUCTOR COMPONENT HAVING REGIONS WITH DIFFERENT LEVELS OF DOPING
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT UNTERSCHIEDLICH STARK DOTIERTEN BEREICHEN
Title (fr)
PROCÉDÉ DE FABRICATION D'UN COMPOSANT SEMI-CONDUCTEUR AVEC DES ZONES DOPÉES À DES DEGRÉS DIFFÉREMMENT FORTS
Publication
Application
Priority
- EP 2007000463 W 20070119
- DE 102006003283 A 20060123
Abstract (en)
[origin: US2009017606A1] A method for producing a semiconductor component, in particular a solar cell, having regions which are doped to different extents. A layer is formed which inhibits the diffusion of a dopant and can be penetrated by a dopant, on at least one part of the surface of a semiconductor component material. The diffusion-inhibiting layer is at least partially removed in at least one high-doping region. A dopant source is formed on the diffusion-inhibiting layer and in the at least one high-doping region. Then the dopant is diffused from the dopant source into the semiconductor component material. The semiconductor component is suitable for use in integrated circuits, electronic circuits, solar cell modules, and to produce solar cells having a selective emitter structure.
IPC 8 full level
H01L 21/225 (2006.01); H01L 27/142 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01)
CPC (source: EP KR US)
H01L 21/2255 (2013.01 - EP US); H01L 21/265 (2013.01 - KR); H01L 31/04 (2013.01 - KR); H01L 31/068 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2009017606 A1 20090115; AT E535011 T1 20111215; CN 101379595 A 20090304; CN 101379595 B 20110511; DE 102006003283 A1 20070726; EP 1977442 A1 20081008; EP 1977442 B1 20111123; KR 20080097413 A 20081105; WO 2007082760 A1 20070726
DOCDB simple family (application)
US 17808708 A 20080723; AT 07702893 T 20070119; CN 200780004647 A 20070119; DE 102006003283 A 20060123; EP 07702893 A 20070119; EP 2007000463 W 20070119; KR 20087018757 A 20080730