EP 1987548 A1 20081105 - SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT AND USE FOR IT
Title (en)
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT AND USE FOR IT
Title (de)
HALBLEITERBAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG SOWIE DESSEN VERWENDUNG
Title (fr)
COMPOSANT SEMI-CONDUCTEUR: PROCÉDÉ DE FABRICATION ET UTILISATION
Publication
Application
Priority
- EP 2007001325 W 20070215
- DE 102006007797 A 20060220
Abstract (en)
[origin: WO2007096084A1] The invention relates to a method for producing a semiconductor component with at least one surface made optically reflective, in which a silicon wafer, which has an etchable dielectric layer at least in certain regions on at least one of its surfaces, is provided with a silicon-containing masking layer for shielding it from fluidic media. A layer of aluminium is additionally deposited on the masking layer and a thermal treatment of the semiconductor component is subsequently performed, causing the silicon in the aluminium to break down. The invention also relates to a corresponding semiconductor component made from a silicon wafer with at least one surface made optically reflective. Semiconductor components of this type are used in particular as solar cells.
IPC 8 full level
H01L 31/052 (2006.01)
CPC (source: EP KR US)
H01L 31/054 (2014.12 - KR); H01L 31/056 (2014.12 - EP US); Y02E 10/52 (2013.01 - EP US)
Citation (search report)
See references of WO 2007096084A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2007096084 A1 20070830; DE 102006007797 A1 20070913; DE 102006007797 B4 20080103; EP 1987548 A1 20081105; JP 2009527895 A 20090730; KR 20080095252 A 20081028; US 2009032095 A1 20090205
DOCDB simple family (application)
EP 2007001325 W 20070215; DE 102006007797 A 20060220; EP 07711548 A 20070215; JP 2008554680 A 20070215; KR 20087020286 A 20080819; US 16275507 A 20070215