EP 1994567 A2 20081126 - MOS TRANSISTOR WITH ADJUSTABLE THRESHOLD
Title (en)
MOS TRANSISTOR WITH ADJUSTABLE THRESHOLD
Title (de)
MOS-TRANSISTOR MIT EINSTELLBAREM GRENZWERT
Title (fr)
TRANSISTOR MOS A SEUIL REGLABLE
Publication
Application
Priority
- FR 2007050798 W 20070214
- FR 0650525 A 20060214
Abstract (en)
[origin: WO2007093741A2] The invention concerns a MOS transistor comprising a conductive extension (10) of its source region, isolated from its substrate, and extending partly under its channel.
IPC 8 full level
H01L 29/792 (2006.01); H01L 21/336 (2006.01); H01L 29/06 (2006.01)
CPC (source: EP US)
H01L 29/0653 (2013.01 - EP US); H01L 29/1054 (2013.01 - EP US); H01L 29/1083 (2013.01 - EP US); H01L 29/66636 (2013.01 - EP US); H01L 29/7841 (2013.01 - EP US); H01L 29/792 (2013.01 - EP US); H01L 29/7923 (2013.01 - EP US); H01L 29/665 (2013.01 - EP US); H01L 29/66833 (2013.01 - EP US)
Citation (search report)
See references of WO 2007093741A2
Citation (examination)
EP 1487023 A2 20041215 - DENSO CORP [JP]
Designated contracting state (EPC)
FR GB
DOCDB simple family (publication)
WO 2007093741 A2 20070823; WO 2007093741 A3 20071122; EP 1994567 A2 20081126; JP 2009527103 A 20090723; US 2010067310 A1 20100318; US 8410539 B2 20130402
DOCDB simple family (application)
FR 2007050798 W 20070214; EP 07731623 A 20070214; JP 2008553809 A 20070214; US 27905607 A 20070214