Global Patent Index - EP 1997134 A1

EP 1997134 A1 20081203 - APPARATUS AND METHOD FOR DETECTING DEFECTS IN WAFER USING LINE SENSOR CAMERA

Title (en)

APPARATUS AND METHOD FOR DETECTING DEFECTS IN WAFER USING LINE SENSOR CAMERA

Title (de)

VORRICHTUNG UND VERFAHREN ZUM DETEKTIEREN VON DEFEKTEN IN EINEM WAFER UNTER VERWENDUNG EINER ZEILENSENSORKAMERA

Title (fr)

APPAREIL ET PROCÉDÉ DE DÉTECTION DE DÉFAUTS DANS UNE TRANCHE AU MOYEN D'UNE CAMÉRA A CAPTEUR LINÉAIRE

Publication

EP 1997134 A1 20081203 (EN)

Application

EP 07708823 A 20070207

Priority

  • KR 2007000673 W 20070207
  • KR 20060011840 A 20060207

Abstract (en)

[origin: WO2007091846A1] An apparatus and method for detecting defects in a wafer are provided. An optical part is disposed under an inspection stage and radiates infrared light onto the wafer disposed on an inspection region formed of a transmissive material on the inspection stage. An image obtaining part detects the infrared light transmitted through the wafer disposed on the inspection stage to output an image signal. A conveying part conveys the image obtaining part or the inspection stage in a short side direction of a photographing region of a line sensor included in the image obtaining part, and outputs a pulse signal having a predetermined period corresponding to a relative straight moving distance between the image obtaining part and the inspection stage. A controller counts the pulse signal and outputs a photographing instruction signal controlling the image obtaining part to photograph the wafer whenever the wafer is conveyed in the short side direction of the photographing region of the line sensor toward the image obtaining part by a distance corresponding to the length of short sides of the photographing region. A defect detection part combines each image signal to generate an inspection image corresponding to the wafer, and detects positions of defects existing in the wafer. Each of the line sensors transmits charges accumulated therein to an adjacent line sensor when a photographing instruction signal is input, and then detects the infrared light transmitted through the wafer, and the line sensor positioned at an end in an opposite direction of the conveyance direction outputs charges accumulated therein as the image signal from a time when the number of input photographing signals exceeds the number of line sensors.

IPC 8 full level

H01L 21/66 (2006.01); G01N 21/95 (2006.01); G01R 31/311 (2006.01); G06V 10/10 (2022.01)

CPC (source: EP KR US)

G01N 21/9505 (2013.01 - EP US); G01R 31/311 (2013.01 - EP US); G06V 10/10 (2022.01 - EP US); H01L 22/00 (2013.01 - KR)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2007091846 A1 20070816; EP 1997134 A1 20081203; EP 1997134 A4 20121031; EP 1997134 B1 20140723; KR 100793182 B1 20080110; KR 20070080591 A 20070810; MY 143415 A 20110513; TW 200732650 A 20070901; TW I314988 B 20090921; US 2009257646 A1 20091015; US 8055058 B2 20111108

DOCDB simple family (application)

KR 2007000673 W 20070207; EP 07708823 A 20070207; KR 20070012924 A 20070207; MY PI20083941 A 20070207; TW 96104542 A 20070207; US 29613407 A 20070207