EP 1999781 A2 20081210 - DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES
Title (en)
DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES
Title (de)
TROCKENÄTZVERFAHREN ZUR BESEITIGUNG ELEKTRISCHER KURZSCHLÜSSE BEI MRAM-GERÄTESTRUKTUREN
Title (fr)
PROCEDE D'ARRET DE GRAVURE A SEC POUR ELIMINER UN COURT-CIRCUIT ELECTRIQUE DANS DES STRUCTURES DE DISPOSITIF MRAM
Publication
Application
Priority
- US 2007006607 W 20070316
- US 78315706 P 20060316
- US 72455607 A 20070314
Abstract (en)
[origin: WO2007109117A2] The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
IPC 8 full level
H01L 21/00 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01)
CPC (source: EP KR)
H10N 50/01 (2023.02 - EP KR); H10N 52/00 (2023.02 - KR)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2007109117 A2 20070927; WO 2007109117 A3 20071213; EP 1999781 A2 20081210; JP 2009530825 A 20090827; JP 5085637 B2 20121128; KR 20090008240 A 20090121
DOCDB simple family (application)
US 2007006607 W 20070316; EP 07753250 A 20070316; JP 2009500499 A 20070316; KR 20087025349 A 20081016