Global Patent Index - EP 2013917 A1

EP 2013917 A1 20090114 - RADIATION-EMITTING SEMICONDUCTOR BODY WITH CARRIER SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF

Title (en)

RADIATION-EMITTING SEMICONDUCTOR BODY WITH CARRIER SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF

Title (de)

STRAHLUNGSEMITTIERENDER HALBLEITERKÖRPER MIT TRÄGERSUBSTRAT UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN

Title (fr)

CORPS SEMI-CONDUCTEUR ÉMETTEUR DE RAYONNEMENT AVEC UN SUBSTRAT DE SUPPORT ET SON PROCÉDÉ DE FABRICATION

Publication

EP 2013917 A1 20090114 (DE)

Application

EP 07722350 A 20070503

Priority

  • DE 2007000793 W 20070503
  • DE 102006020537 A 20060503
  • DE 102006033502 A 20060719

Abstract (en)

[origin: WO2007124737A1] The invention relates to a radiation-emitting semiconductor body with carrier substrate and a method for the production thereof. The method involves producing a structured connection of a semiconductor layer sequence (2) to a carrier substrate wafer (1). The semiconductor layer sequence is subdivided into a plurality of semiconductor layer stacks (200) by means of cuts (6) through the semiconductor layer sequence and the carrier substrate wafer (1) is subdivided into a plurality of carrier substrates (100) by means of cuts (7) through the carrier substrate wafer (1). In this case, the structured connection is embodied in such a way that at least one semiconductor layer stack (200) is connected to precisely one associated carrier substrate (100). Moreover, at least one cut (7) through the carrier substrate wafer is lengthened by none of the cuts (6) through the semiconductor layer sequence in such a way that a rectilinear cut through the carrier substrate wafer and the semiconductor layer sequence results.

IPC 8 full level

H01L 33/00 (2010.01); H01L 33/42 (2010.01); H01L 33/62 (2010.01)

CPC (source: EP US)

H01L 33/0095 (2013.01 - EP US); H01L 21/78 (2013.01 - EP US); H01L 33/42 (2013.01 - EP US); H01L 33/62 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)

Citation (search report)

See references of WO 2007124737A1

Designated contracting state (EPC)

DE

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

WO 2007124737 A1 20071108; CN 101432900 A 20090513; CN 101432900 B 20120502; DE 102006033502 A1 20071115; EP 2013917 A1 20090114; JP 2009535826 A 20091001; JP 5138675 B2 20130206; KR 101329435 B1 20131114; KR 20090013218 A 20090204; TW 200802985 A 20080101; TW I343662 B 20110611; US 2009218587 A1 20090903; US 2011186904 A1 20110804; US 8088649 B2 20120103; US 8258521 B2 20120904

DOCDB simple family (application)

DE 2007000793 W 20070503; CN 200780015605 A 20070503; DE 102006033502 A 20060719; EP 07722350 A 20070503; JP 2009508116 A 20070503; KR 20087029410 A 20070503; TW 96114899 A 20070427; US 201113085976 A 20110413; US 29944607 A 20070503