Global Patent Index - EP 2016624 A1

EP 2016624 A1 20090121 - SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL AND ASSOCIATED METHODS

Title (en)

SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL AND ASSOCIATED METHODS

Title (de)

HALBLEITERBAUELEMENT MIT FLOATING-GATE-SPEICHERZELLE MIT EINEM ÜBERGITTERKANAL UND ENTSPRECHENDE VERFAHREN

Title (fr)

DISPOSITIF A SEMI-CONDUCTEUR COMPORTANT UNE CELLULE DE MEMOIRE A GRILLE FLOTTANTE AVEC UN CANAL DE SUPER-RESEAU ET PROCEDES ASSOCIES

Publication

EP 2016624 A1 20090121 (EN)

Application

EP 07761833 A 20070503

Priority

  • US 2007068155 W 20070503
  • US 38178706 A 20060505
  • US 38179406 A 20060505

Abstract (en)

[origin: WO2007131117A1] A semiconductor device may include a semiconductor substrate (21) and at least one non- volatile memory cell. The at least one memory cell may include spaced apart source and drain regions (26,27), and a superlattice channel (25) including a plurality of stacked groups of layers on the semiconductor substrate between the source and drain regions. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, which may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A floating gate (37) may be adjacent the superlattice channel, and a control gate (39) may be adjacent the second gate (38) insulating layer.

IPC 8 full level

H01L 29/788 (2006.01); H01L 27/115 (2006.01); H01L 29/15 (2006.01)

CPC (source: EP)

H01L 29/155 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01)

Citation (search report)

See references of WO 2007131117A1

Designated contracting state (EPC)

DE FR GB IT

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

WO 2007131117 A1 20071115; AU 2007247953 A1 20071115; CA 2650809 A1 20071115; EP 2016624 A1 20090121; JP 2009536463 A 20091008; TW 200807699 A 20080201; TW I335664 B 20110101

DOCDB simple family (application)

US 2007068155 W 20070503; AU 2007247953 A 20070503; CA 2650809 A 20070503; EP 07761833 A 20070503; JP 2009510077 A 20070503; TW 96115983 A 20070504