EP 2016624 A1 20090121 - SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL AND ASSOCIATED METHODS
Title (en)
SEMICONDUCTOR DEVICE INCLUDING A FLOATING GATE MEMORY CELL WITH A SUPERLATTICE CHANNEL AND ASSOCIATED METHODS
Title (de)
HALBLEITERBAUELEMENT MIT FLOATING-GATE-SPEICHERZELLE MIT EINEM ÜBERGITTERKANAL UND ENTSPRECHENDE VERFAHREN
Title (fr)
DISPOSITIF A SEMI-CONDUCTEUR COMPORTANT UNE CELLULE DE MEMOIRE A GRILLE FLOTTANTE AVEC UN CANAL DE SUPER-RESEAU ET PROCEDES ASSOCIES
Publication
Application
Priority
- US 2007068155 W 20070503
- US 38178706 A 20060505
- US 38179406 A 20060505
Abstract (en)
[origin: WO2007131117A1] A semiconductor device may include a semiconductor substrate (21) and at least one non- volatile memory cell. The at least one memory cell may include spaced apart source and drain regions (26,27), and a superlattice channel (25) including a plurality of stacked groups of layers on the semiconductor substrate between the source and drain regions. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon, which may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. A floating gate (37) may be adjacent the superlattice channel, and a control gate (39) may be adjacent the second gate (38) insulating layer.
IPC 8 full level
H01L 29/788 (2006.01); H01L 29/15 (2006.01); H10B 69/00 (2023.01)
CPC (source: EP)
H01L 29/155 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01)
Designated contracting state (EPC)
DE FR GB IT
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2007131117 A1 20071115; AU 2007247953 A1 20071115; CA 2650809 A1 20071115; EP 2016624 A1 20090121; JP 2009536463 A 20091008; TW 200807699 A 20080201; TW I335664 B 20110101
DOCDB simple family (application)
US 2007068155 W 20070503; AU 2007247953 A 20070503; CA 2650809 A 20070503; EP 07761833 A 20070503; JP 2009510077 A 20070503; TW 96115983 A 20070504