EP 2020035 A1 20090204 - SEMICONDUCTOR DEVICE INCLUDING A DOPANT BLOCKING SUPERLATTICE AND ASSOCIATED METHODS
Title (en)
SEMICONDUCTOR DEVICE INCLUDING A DOPANT BLOCKING SUPERLATTICE AND ASSOCIATED METHODS
Title (de)
HALBLEITERBAUELEMENT MIT DOTIERUNGSBLOCKIERENDEM ÜBERGITTER UND ENTSPRECHENDE VERFAHREN
Title (fr)
DISPOSITIF SEMI-CONDUCTEUR COMPRENANT UN RESEAU SUPERPOSE DE BLOCAGE DE DOPANT ET PROCEDES ASSOCIES
Publication
Application
Priority
- US 2007067926 W 20070501
- US 38098706 A 20060501
- US 38099206 A 20060501
Abstract (en)
[origin: WO2007130973A1] A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET). The at least one MOSFET may include a body, a channel layer adjacent the body, and a dopant blocking superlattice between the body and the channel layer. The dopant blocking superlattice may include a plurality of stacked groups of layers. Each group of layers of the dopant blocking superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions.
IPC 8 full level
H01L 29/10 (2006.01); H01L 29/15 (2006.01)
CPC (source: EP)
B82Y 10/00 (2013.01); H01L 29/1054 (2013.01); H01L 29/151 (2013.01); H01L 29/665 (2013.01); H01L 29/6659 (2013.01)
Citation (search report)
See references of WO 2007130973A1
Designated contracting state (EPC)
DE FR GB IT
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2007130973 A1 20071115; AU 2007248171 A1 20071115; CA 2650965 A1 20071115; EP 2020035 A1 20090204; JP 2009535861 A 20091001
DOCDB simple family (application)
US 2007067926 W 20070501; AU 2007248171 A 20070501; CA 2650965 A 20070501; EP 07761675 A 20070501; JP 2009510026 A 20070501