Global Patent Index - EP 2020691 A2

EP 2020691 A2 2009-02-04 - III-Nitride semiconductor light emitting device

Title (en)

III-Nitride semiconductor light emitting device

Title (de)

Lichtemittierende III-Nitrid-Halbleiter-Vorrichtung

Title (fr)

Dispositif électroluminescent à semi-conducteur en nitrure III

Publication

EP 2020691 A2 (EN)

Application

EP 08161500 A

Priority

  • KR 20070077218 A
  • KR 20070106275 A

Abstract (en)

The present invention provides a III-nitride semiconductor light emitting device, including: a plurality of III-nitride semiconductor layers including an active layer for generating light by recombination of electrons and holes; and a substrate used to grow the plurality of III-nitride semiconductor layers, and including a protrusion with two opposite sides rounded.

IPC 8 full level (invention and additional information)

H01L 33/32 (2010.01); H01L 21/20 (2006.01)

CPC (invention and additional information)

H01L 33/0079 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02658 (2013.01)

Citation (applicant)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

EPO simple patent family

EP 2020691 A2 20090204; JP 2009038377 A 20090219; TW 200913329 A 20090316; US 2009032835 A1 20090205

INPADOC legal status


2013-08-07 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20130201

2009-02-04 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

2009-02-04 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO:

- Countries: AL BA MK RS