EP 2020691 A2 20090204 - III-Nitride semiconductor light emitting device
Title (en)
III-Nitride semiconductor light emitting device
Title (de)
Lichtemittierende III-Nitrid-Halbleiter-Vorrichtung
Title (fr)
Dispositif électroluminescent à semi-conducteur en nitrure III
Publication
Application
Priority
- KR 20070077218 A 20070731
- KR 20070106275 A 20071022
Abstract (en)
The present invention provides a III-nitride semiconductor light emitting device, including: a plurality of III-nitride semiconductor layers including an active layer for generating light by recombination of electrons and holes; and a substrate used to grow the plurality of III-nitride semiconductor layers, and including a protrusion with two opposite sides rounded.
IPC 8 full level
H01L 33/32 (2010.01); H01L 21/20 (2006.01)
CPC (source: EP US)
H01L 33/0093 (2020.05 - EP US); H01L 21/0242 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/02658 (2013.01 - EP US)
Citation (applicant)
- WO 02075821 A1 20020926 - MITSUBISHI CABLE IND LTD [JP], et al
- WO 03010831 A1 20030206 - NICHIA CORP [JP]
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
EP 2020691 A2 20090204; JP 2009038377 A 20090219; TW 200913329 A 20090316; US 2009032835 A1 20090205
DOCDB simple family (application)
EP 08161500 A 20080730; JP 2008197031 A 20080730; TW 97128951 A 20080731; US 18335108 A 20080731