Global Patent Index - EP 2021525 A2

EP 2021525 A2 20090211 - GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION

Title (en)

GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION

Title (de)

GASVERTEILER ZUR VERWENDUNG BEI DER EPITAXIALFILMBILDUNG

Title (fr)

COLLECTEURS DE GAZ S'UTILISANT PENDANT LA FORMATION D'UN FILM ÉPITAXIAL

Publication

EP 2021525 A2 20090211 (EN)

Application

EP 07754972 A 20070406

Priority

  • US 2007008541 W 20070406
  • US 79022706 P 20060407

Abstract (en)

[origin: WO2007117576A2] The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

IPC 8 full level

C23C 16/00 (2006.01); C23C 16/455 (2006.01)

CPC (source: EP KR)

C23C 16/42 (2013.01 - KR); C30B 23/02 (2013.01 - EP KR); C30B 25/02 (2013.01 - EP); C30B 33/12 (2013.01 - EP); C30B 35/00 (2013.01 - EP); H01L 21/02 (2013.01 - KR); H01L 21/20 (2013.01 - KR)

Citation (search report)

See references of WO 2007117576A2

Designated contracting state (EPC)

DE FR NL

Designated extension state (EPC)

AL BA HR MK RS

DOCDB simple family (publication)

WO 2007117576 A2 20071018; WO 2007117576 A3 20081016; CN 101415859 A 20090422; EP 2021525 A2 20090211; JP 2009533843 A 20090917; KR 20090006144 A 20090114; TW 200805456 A 20080116

DOCDB simple family (application)

US 2007008541 W 20070406; CN 200780012516 A 20070406; EP 07754972 A 20070406; JP 2009504307 A 20070406; KR 20087026634 A 20081030; TW 96112380 A 20070409