Global Patent Index - EP 2024532 A2

EP 2024532 A2 2009-02-18 - CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN

Title (en)

CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN

Title (de)

CHEMISCHE DAMPFABLAGERUNG VON FLUSSÄHNLICHEM HOCHQUALITÄTSSILICIUMDIOXID ÜBER EINEN SILICIUMHALTIGEN VORLÄUFER UND ATOMISCHEN SAUERSTOFF

Title (fr)

DEPOT CHIMIQUE EN PHASE VAPEUR DE DIOXYDE DE SILICIUM A ECOULEMENT DE HAUTE QUALITE A PARTIR D'UN PRECURSEUR CONTENANT DU SILICIUM ET D'OXYGENE ATOMIQUE

Publication

EP 2024532 A2 (EN)

Application

EP 07797890 A

Priority

  • US 2007069999 W
  • US 80348306 P
  • US 75444007 A

Abstract (en)

[origin: WO2007140424A2] Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

IPC 8 full level (invention and additional information)

C23C 16/40 (2006.01); C23C 16/452 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); H01L 21/316 (2006.01)

CPC (invention and additional information)

H01L 21/3105 (2013.01); C23C 16/402 (2013.01); C23C 16/452 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01L 21/02315 (2013.01); H01L 21/02337 (2013.01); H01L 21/31633 (2013.01)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA HR MK RS

EPO simple patent family

WO 2007140424 A2 20071206; WO 2007140424 A3 20080221; EP 2024532 A2 20090218; EP 2024532 A4 20140806; JP 2009539268 A 20091112

INPADOC legal status


2015-06-17 [18D] APPLICATION DEEMED TO BE WITHDRAWN

- Effective date: 20141202

2014-08-06 [A4] DESPATCH OF SUPPLEMENTARY SEARCH REPORT

- Effective date: 20140709

2014-08-06 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: H01L 21/3105 20060101ALI20140703BHEP

2014-08-06 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: H01L 21/02 20060101ALI20140703BHEP

2014-08-06 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: C23C 16/56 20060101ALI20140703BHEP

2014-08-06 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: C23C 16/452 20060101ALI20140703BHEP

2014-08-06 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: C23C 16/40 20060101AFI20140703BHEP

2014-08-06 [RIC1] CLASSIFICATION (CORRECTION)

- IPC: H01L 21/316 20060101ALI20140703BHEP

2009-09-02 [DAX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT (TO ANY COUNTRY) (DELETED)

2009-02-18 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20070925

2009-02-18 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

2009-02-18 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO:

- Countries: AL BA HR MK RS