EP 2029310 A2 20090304 - Method to creaate a low divergence, high power laser beam for material processing applications
Title (en)
Method to creaate a low divergence, high power laser beam for material processing applications
Title (de)
Verfahren zur Erzeugung eines hochleistungs-Laserstrahls mit geringer Divergenz für Materialverarbeitungsanwendungen
Title (fr)
Procédé de génération d'un faisceau laser à faible divergence et haute puissance destiné à des applications de traitement de matériaux
Publication
Application
Priority
- US 2007013029 W 20070531
- US 44737906 A 20060605
- US 80559607 A 20070523
Abstract (en)
[origin: US2007280311A1] A thin beam laser crystallization apparatus for selectively melting a film deposited on a substrate is disclosed having a laser source producing a pulsed laser output beam, the source having an oscillator comprising a convex reflector and a piano output coupler; and an optical arrangement focusing the beam in a first axis and spatially expanding the beam in a second axis to produce a line beam for interaction with the film.
IPC 8 full level
B23K 26/00 (2006.01); H01L 21/00 (2006.01)
CPC (source: EP KR US)
B23K 26/03 (2013.01 - EP US); B23K 26/034 (2013.01 - EP US); B23K 26/0622 (2015.10 - EP US); B23K 26/064 (2015.10 - KR); B23K 26/0665 (2013.01 - EP US); B23K 26/0738 (2013.01 - EP US); B23K 26/08 (2013.01 - KR); B23K 26/0853 (2013.01 - EP US); B23K 26/40 (2013.01 - EP US); C30B 13/24 (2013.01 - EP US); C30B 29/06 (2013.01 - EP US); H01L 21/20 (2013.01 - KR); H01L 21/268 (2013.01 - KR); B23K 2101/34 (2018.07 - EP US); B23K 2101/40 (2018.07 - EP US); B23K 2103/50 (2018.07 - EP US)
Designated contracting state (EPC)
DE
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
US 2007280311 A1 20071206; US 8803027 B2 20140812; EP 2029310 A2 20090304; EP 2029310 A4 20110323; EP 2029310 B1 20151223; JP 2009540570 A 20091119; JP 5633898 B2 20141203; KR 101357017 B1 20140205; KR 20090029235 A 20090320; SG 185860 A1 20121228; TW 200810867 A 20080301; TW I318590 B 20091221; WO 2007143144 A2 20071213; WO 2007143144 A3 20081023; WO 2007143144 A9 20080207
DOCDB simple family (application)
US 80559607 A 20070523; EP 07815063 A 20070531; JP 2009514316 A 20070531; KR 20087032051 A 20070531; SG 2011040524 A 20070531; TW 96119482 A 20070531; US 2007013029 W 20070531