Global Patent Index - EP 2033936 A2

EP 2033936 A2 20090311 - Method for producing trichlorosilane and method for producing polycrystalline silicon

Title (en)

Method for producing trichlorosilane and method for producing polycrystalline silicon

Title (de)

Verfahren zur Herstellung von Trichlorosilan und Verfahren zur Herstellung eines polykristallinen Siliciums

Title (fr)

Procédé de production de trichlorosilane et procédé de production de silicium polycristallin

Publication

EP 2033936 A2 20090311 (EN)

Application

EP 08010812 A 20080613

Priority

JP 2007229858 A 20070905

Abstract (en)

A hydrogenation reaction vessel (101) makes STC-containing substance react with hydrogen to convert the substance into TCS. A low boils removal column (102) separates a chlorosilane distillate discharged from a hydrogenation reaction vessel (101) into TCS and a mixture distillate containing hyper-hydrogenated chlorosilane, and circulates the mixture distillate containing hyper-hydrogenated chlorosilane to the hydrogenation reaction vessel (101). The mixture distillate containing the hyper-hydrogenated chlorosilane separated in the low boils removal column (102) is circulatingly supplied to the hydrogenation reaction vessel (101). Accordingly, low boils by-product conventionally wasted is circulated and recycled in the process, which results in enhancing a yield of TCS production.

IPC 8 full level

C01B 33/03 (2006.01); C01B 33/035 (2006.01); C01B 33/107 (2006.01)

CPC (source: EP US)

C01B 33/035 (2013.01 - EP US); C01B 33/1071 (2013.01 - EP US); C01B 33/10778 (2013.01 - EP US)

Citation (applicant)

Designated contracting state (EPC)

DE IT

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

EP 2033936 A2 20090311; EP 2033936 A3 20090603; EP 2033936 B1 20131113; JP 2009062211 A 20090326; JP 4714196 B2 20110629; US 2009057129 A1 20090305; US 8293076 B2 20121023

DOCDB simple family (application)

EP 08010812 A 20080613; JP 2007229858 A 20070905; US 13548708 A 20080609