EP 2036120 A2 20090318 - A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE
Title (en)
A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE
Title (de)
NEUARTIGER ABSCHEIDUNGSPLASMA-AUSHÄRTZYKLUSPROZESS ZUR VERBESSERUNG DER FILMQUALITÄT VON SILICIUMDIOXID
Title (fr)
NOUVEAU PROCEDE COMBINANT DEPOT ET DURCISSEMENT PAR PLASMA PERMETTANT D'AMELIORER LA QUALITE D'UN FILM DE DIOXYDE DE SILICIUM
Publication
Application
Priority
- US 2007069899 W 20070529
- US 80348106 P 20060530
- US 75396807 A 20070525
Abstract (en)
[origin: WO2007140377A2] Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.
IPC 8 full level
H01L 21/302 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/316 (2006.01); H01L 21/66 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP KR)
C23C 16/045 (2013.01 - EP KR); C23C 16/402 (2013.01 - EP KR); C23C 16/56 (2013.01 - EP KR); H01L 21/02271 (2013.01 - EP); H01L 21/02277 (2013.01 - EP KR); H01L 21/02323 (2013.01 - EP KR); H01L 21/0234 (2013.01 - EP KR); H01L 21/02359 (2013.01 - EP); H01L 21/0262 (2013.01 - KR); H01L 21/76224 (2013.01 - EP KR); H01L 22/12 (2013.01 - EP KR); H01L 21/02126 (2013.01 - EP); H01L 21/02164 (2013.01 - EP); H01L 21/02211 (2013.01 - EP); H01L 21/02216 (2013.01 - EP); H01L 21/02274 (2013.01 - EP); H01L 21/0228 (2013.01 - EP); H01L 2924/0002 (2013.01 - EP)
C-Set (source: EP)
Designated contracting state (EPC)
DE
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2007140377 A2 20071206; WO 2007140377 A3 20080828; WO 2007140377 A9 20081016; CN 101454877 A 20090610; CN 101454877 B 20120704; EP 2036120 A2 20090318; EP 2036120 A4 20120208; JP 2009539266 A 20091112; JP 5225268 B2 20130703; KR 101115750 B1 20120307; KR 20090019865 A 20090225; TW 200807558 A 20080201; TW I366876 B 20120621
DOCDB simple family (application)
US 2007069899 W 20070529; CN 200780020052 A 20070529; EP 07784191 A 20070529; JP 2009513423 A 20070529; KR 20087031774 A 20070529; TW 96119169 A 20070529