EP 2038208 A1 20090325 - FABRICATION METHOD OF A NANODEVICE STRUCTURE
Title (en)
FABRICATION METHOD OF A NANODEVICE STRUCTURE
Title (de)
HERSTELLUNGSVERFAHREN FÜR EINE NANOVORRICHTUNGSSTRUKTUR
Title (fr)
PROCÉDÉ DE FABRICATION D'UNE STRUCTURE DE NANODISPOSITIF
Publication
Application
Priority
- KR 2007003043 W 20070622
- KR 20060063840 A 20060707
Abstract (en)
[origin: WO2008004777A1] A nanodevice structure according to the present invention includes a substrate (10) having alignment marks (16) formed thereon, a plurality of nanomaterial layers (20) applied on the substrate, and electrodes formed to be in partial contact with the upper surface of the nanomaterial layer (20) in order to obtain easy application of the nanomaterial layer (20) and low contact resistance between the electrodes and the nanomaterial layer (20).
IPC 8 full level
B82B 1/00 (2006.01); B81B 7/00 (2006.01); B82B 3/00 (2006.01); G03F 9/00 (2006.01); H01J 1/304 (2006.01); H01J 31/12 (2006.01); H01L 21/00 (2006.01); H10K 99/00 (2023.01)
CPC (source: EP KR)
B81B 7/0006 (2013.01 - EP); B82B 1/00 (2013.01 - KR); B82B 3/00 (2013.01 - KR); B82Y 10/00 (2013.01 - EP); H01J 1/304 (2013.01 - EP); H01J 31/127 (2013.01 - EP); H10K 71/60 (2023.02 - EP); B81B 2207/07 (2013.01 - EP); B82Y 40/00 (2013.01 - KR); H01J 2201/30446 (2013.01 - EP); H01J 2201/30469 (2013.01 - EP); H01J 2329/0455 (2013.01 - EP); H10K 71/12 (2023.02 - EP); H10K 85/221 (2023.02 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2008004777 A1 20080110; EP 2038208 A1 20090325; EP 2038208 A4 20140723; JP 2009543327 A 20091203; KR 100797093 B1 20080122; KR 20080004912 A 20080110
DOCDB simple family (application)
KR 2007003043 W 20070622; EP 07747074 A 20070622; JP 2009517966 A 20070622; KR 20060063840 A 20060707