EP 2043800 A2 20090408 - METHOD OF MAKING SPUTTERING TARGET AND TARGET PRODUCED
Title (en)
METHOD OF MAKING SPUTTERING TARGET AND TARGET PRODUCED
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES SPUTTERTARGETS UND HERGESTELLTES TARGET
Title (fr)
PROCÉDÉ DE PRODUCTION D'UNE CIBLE DE PULVÉRISATION ET CIBLE AINSI PRODUITE
Publication
Application
Priority
- US 2007015654 W 20070709
- US 83152106 P 20060717
Abstract (en)
[origin: US2008011392A1] Method of making a sputtering target includes the steps of melting a metallic target material, controlling the temperature of the melted target material in a manner that the melted target material has almost no superheat, introducing the melted target material into a mold having interior walls forming a mold cavity in the shape of the desired target, and solidifying the melted target material in the mold by extracting heat therefrom at a rate to solidify it to form a sputtering target having a cellular nondendritic microstructure uniformly throughout the target. A sputtering target is provided comprising a metallic target material having a substantially equiaxed, cellular nondendritic microstructure uniformly throughout the target.
IPC 8 full level
B22D 27/04 (2006.01); B22D 27/09 (2006.01); C22C 19/07 (2006.01)
CPC (source: EP US)
B22D 21/025 (2013.01 - EP US); B22D 27/04 (2013.01 - EP US); C22C 19/07 (2013.01 - EP US); C23C 14/3414 (2013.01 - EP US)
Citation (search report)
See references of WO 2008018967A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
US 2008011392 A1 20080117; CN 101490290 A 20090722; EP 2043800 A2 20090408; JP 2009543954 A 20091210; TW 200811304 A 20080301; WO 2008018967 A2 20080214; WO 2008018967 A3 20081127
DOCDB simple family (application)
US 82585407 A 20070709; CN 200780026952 A 20070709; EP 07796745 A 20070709; JP 2009520756 A 20070709; TW 96124754 A 20070706; US 2007015654 W 20070709