EP 2045836 B1 20120523 - METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Title (en)
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Title (de)
VERFAHREN ZUM HERSTELLEN EINES HALBLEITERSUBSTRATS
Title (fr)
PROCÉDÉ DE FABRICATION D'UN SUBSTRAT SEMI-CONDUCTEUR
Publication
Application
Priority
- JP 2007063349 W 20070704
- JP 2006201485 A 20060725
Abstract (en)
[origin: EP2045836A1] The present invention is a method for producing a semiconductor substrate, including steps of forming a SiGe gradient composition layer and a SiGe constant composition layer on a Si single crystal substrate, flattening a surface of the SiGe constant composition layer, removing a natural oxide film on the flattened surface of the SiGe constant composition layer, and forming a strained Si layer on the surface of the SiGe constant composition layer from which the natural oxide film has been removed, wherein the formation of the SiGe gradient composition layer and the formation of the SiGe constant composition layer are performed at a temperature T 1 that is higher than 800°C, the removal of the natural oxide film from the surface of the SiGe constant composition layer is performed in a reducing atmosphere through a heat treatment at a temperature T 2 that is equal to or higher than 800°C and lower than the temperature T 1 , and the formation of the strained Si layer is performed at a temperature T 3 that is lower than the temperature T 1 . This method enables epitaxial growth of the strained Si layer on the flattened SiGe layer without degrading surface flatness of the SiGe layer.
IPC 8 full level
H01L 21/02 (2006.01)
CPC (source: EP KR US)
H01L 21/02381 (2013.01 - EP US); H01L 21/0245 (2013.01 - EP US); H01L 21/02502 (2013.01 - EP KR US); H01L 21/0251 (2013.01 - EP KR US); H01L 21/02532 (2013.01 - EP KR US); H01L 21/0262 (2013.01 - EP KR US); H01L 21/02658 (2013.01 - EP US); H01L 21/02661 (2013.01 - EP KR US)
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
EP 2045836 A1 20090408; EP 2045836 A4 20100414; EP 2045836 B1 20120523; CN 101496142 A 20090729; CN 101496142 B 20101027; JP 2008028277 A 20080207; JP 4894390 B2 20120314; KR 101364995 B1 20140220; KR 20090051733 A 20090522; TW 200828413 A 20080701; TW I459443 B 20141101; US 2009305485 A1 20091210; US 8076223 B2 20111213; WO 2008013032 A1 20080131
DOCDB simple family (application)
EP 07768119 A 20070704; CN 200780027926 A 20070704; JP 2006201485 A 20060725; JP 2007063349 W 20070704; KR 20097001468 A 20070704; TW 96126833 A 20070723; US 30952707 A 20070704