EP 2047515 A1 20090415 - TECHNIQUE FOR DOPING COMPOUND LAYERS USED IN SOLAR CELL FABRICATION
Title (en)
TECHNIQUE FOR DOPING COMPOUND LAYERS USED IN SOLAR CELL FABRICATION
Title (de)
VERFAHREN ZUR DOTIERUNG VON VERBUNDSCHICHTEN FÜR DIE HERSTELLUNG VON SOLARZELLEN
Title (fr)
TECHNIQUE POUR DOPER DES COUCHES COMPOSITES UTILISEES DANS LA FABRICATION DE CELLULES SOLAIRES
Publication
Application
Priority
- US 2007016847 W 20070726
- US 82047906 P 20060726
Abstract (en)
[origin: WO2008013911A1] The present invention includes methods and apparatus therefrom for preparing thin films of doped semiconductors for radiation detector and photovoltaic applications, and particularly method and apparatus that increase dopants of alkali metals in Group IBIIIAVIA layers. In a particular aspect, the present invention includes a method of preparing a doped Group IBIIIAVIA absorber layer for a solar cell, with the absorber layer being formed by reaction, with a Group VIA material, of a metallic stack with a plurality of layers, in which each layer contains a concentration of an alkali metal selected from the group of Na, K and Li.
IPC 8 full level
H01L 31/00 (2006.01)
CPC (source: EP US)
H01L 31/0322 (2013.01 - EP US); H01L 31/0323 (2013.01 - EP US); Y02E 10/541 (2013.01 - EP US)
Citation (search report)
See references of WO 2008013911A1
Designated contracting state (EPC)
DE ES FR GB IT
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
WO 2008013911 A1 20080131; CN 101506991 A 20090812; EP 2047515 A1 20090415; US 2008023336 A1 20080131
DOCDB simple family (application)
US 2007016847 W 20070726; CN 200780031806 A 20070726; EP 07797033 A 20070726; US 82905207 A 20070726