EP 2067179 A1 20090610 - LED SEMICONDUCTOR BODY AND USE OF AN LED SEMICONDUCTOR BODY
Title (en)
LED SEMICONDUCTOR BODY AND USE OF AN LED SEMICONDUCTOR BODY
Title (de)
LED-HALBLEITERKÖRPER UND VERWENDUNG EINES LED-HALBLEITERKÖRPERS
Title (fr)
ÉLÉMENT SEMI-CONDUCTEUR DEL ET SON UTILISATION
Publication
Application
Priority
- DE 2007001536 W 20070828
- DE 102006046037 A 20060928
Abstract (en)
[origin: DE102006046037A1] The light emitting diode semiconductor body (1) has a radiation generating active layers (31,32) and a photonic crystal (6). The photonic crystal has a number of areas (6a) with a refractive index and another number of areas (6b) with another refractive index. The reflection layer contains materials like aluminum, zinc and silver, a transparent conductive oxide, silicon nitride. The semiconductor body, particularly one of the two active layers or both active layers, containing compound consist of aluminium, gallium, indium, phosphorus, arsenic and nitrogen.
IPC 8 full level
H01L 33/08 (2010.01); H01L 33/20 (2010.01)
CPC (source: EP US)
H01L 33/08 (2013.01 - EP US); H01L 33/20 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2933/0083 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
DE FR GB
Designated extension state (EPC)
AL BA HR MK RS
DOCDB simple family (publication)
DE 102006046037 A1 20080403; DE 102006046037 B4 20240529; CN 101542755 A 20090923; EP 2067179 A1 20090610; JP 2010505245 A 20100218; KR 101406385 B1 20140613; KR 20090064468 A 20090618; TW 200816529 A 20080401; TW I362764 B 20120421; US 2010019259 A1 20100128; US 8115219 B2 20120214; WO 2008040274 A1 20080410
DOCDB simple family (application)
DE 102006046037 A 20060928; CN 200780043366 A 20070828; DE 2007001536 W 20070828; EP 07817459 A 20070828; JP 2009529514 A 20070828; KR 20097008598 A 20070828; TW 96132818 A 20070904; US 44333807 A 20070828