EP 2084792 A2 20090805 - OPTICALLY PUMPED SOLID-STATE LASER WITH CO-DOPED GAIN MEDIUM
Title (en)
OPTICALLY PUMPED SOLID-STATE LASER WITH CO-DOPED GAIN MEDIUM
Title (de)
OPTISCH GEPUMPTER FESTSTOFFLASER MIT KO-DOTIERTEM VERSTÄRKUNGSMITTEL
Title (fr)
LASER À SEMI-CONDUCTEURS POMPÉ DE MANIÈRE OPTIQUE AU MOYEN D'UN MILIEU ACTIF CO-DOPÉ
Publication
Application
Priority
- IB 2007054188 W 20071015
- EP 06122825 A 20061024
- EP 07826745 A 20071015
Abstract (en)
[origin: WO2008050258A2] The present invention relates to a solid-state laser comprising a gain medium (6) of a solid-state host material which is co-doped with Ce<SUP>3+</SUP>-ions and ions of a further rare-earth material. The host material is selected such that a lower edge of the 5d band of the Ce<SUP>3+</SUP>-ions is energetically higher than an upper lasing state of the ions of the further rare-earth material. This laser can be optically pumped by GaN laser diodes (4) in the wavelength region between 400 and 450 nm and emits laser radiation in the visible wavelength range. With this laser, in particular, a GaN diode laser pumped solid-state laser emitting in the green wavelength region can be realized.
IPC 8 full level
H01S 3/0941 (2006.01); H01S 3/16 (2006.01)
CPC (source: EP)
H01S 3/16 (2013.01); H01S 3/0941 (2013.01); H01S 3/1603 (2013.01); H01S 3/1605 (2013.01); H01S 3/1631 (2013.01); H01S 3/1638 (2013.01); H01S 3/1655 (2013.01); H01S 3/1668 (2013.01); H01S 3/1698 (2013.01); H01S 5/32341 (2013.01)
Citation (search report)
See references of WO 2008050258A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2008050258 A2 20080502; WO 2008050258 A3 20080619; CN 101529672 A 20090909; EP 2084792 A2 20090805; JP 2010507920 A 20100311; TW 200830652 A 20080716
DOCDB simple family (application)
IB 2007054188 W 20071015; CN 200780039625 A 20071015; EP 07826745 A 20071015; JP 2009533997 A 20071015; TW 96139348 A 20071019