Global Patent Index - EP 2086013 A1

EP 2086013 A1 20090805 - Oxide semiconductor transistor

Title (en)

Oxide semiconductor transistor

Title (de)

Oxidhalbleitertransistor

Title (fr)

Transistor à semi-conducteur d'oxyde

Publication

EP 2086013 A1 20090805 (EN)

Application

EP 09151196 A 20090123

Priority

  • KR 20080010816 A 20080201
  • KR 20080099608 A 20081010

Abstract (en)

Provided are an oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes: a first gate insulating layer formed between a channel layer formed of an oxide semiconductor and a first gate; and a second gate insulating layer formed between the channel layer and a second gate. The first and second gate insulating layers are formed of different materials.

IPC 8 full level

H01L 29/786 (2006.01); H01L 29/49 (2006.01)

CPC (source: EP)

H01L 29/4908 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01)

Citation (search report)

  • [XY] WO 2006060521 A1 20060608 - DU PONT [US], et al
  • [Y] US 2005199960 A1 20050915 - HOFFMAN RANDY L [US], et al
  • [A] US 5140391 A 19920818 - HAYASHI HISAO [JP], et al
  • [Y] US 2002179908 A1 20021205 - ARAO TATSUYA [JP]
  • [A] US 2003038288 A1 20030227 - SUZUKI HIROSHI [JP], et al
  • [A] US 2001030323 A1 20011018 - IKEDA HIROYUKI [JP]
  • [A] US 2006189049 A1 20060824 - AFENTAKIS THEMISTOKLES [US], et al
  • [Y] NOMURA K ET AL: "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors", NATURE, NATURE PUBLISHING GROUP, LONDON, UK, vol. 432, no. 25, 25 November 2004 (2004-11-25), pages 488 - 492, XP002410190, ISSN: 0028-0836
  • [A] CAKICI T ET AL: "A low power four transistor Schmitt Trigger for asymmetric double gate fully depleted SOI devices", 2003 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS. NEWPORT BEACH, CA, SEPT. 29 - OCT. 2, 2003; [IEEE INTERNATIONAL SOI CONFERENCE], NEW YORK, NY : IEEE, US, 29 September 2003 (2003-09-29), pages 21 - 22, XP010665917, ISBN: 978-0-7803-7815-5

Designated contracting state (EPC)

DE FR GB

Designated extension state (EPC)

AL BA RS

DOCDB simple family (publication)

EP 2086013 A1 20090805; EP 2086013 B1 20180523

DOCDB simple family (application)

EP 09151196 A 20090123