Global Patent Index - EP 2091074 A1

EP 2091074 A1 20090819 - Method for preparing hydrophobic surfaces

Title (en)

Method for preparing hydrophobic surfaces

Title (de)

Verfahren zur Herstellung von hydrophoben Oberflächen

Title (fr)

Procédé de préparation de surfaces hydrophobes

Publication

EP 2091074 A1 20090819 (EN)

Application

EP 08290533 A 20080610

Priority

  • EP 08290138 A 20080213
  • EP 08290533 A 20080610

Abstract (en)

The invention relates to a method for preparing hydrophobic surfaces which find their application in direct silicon bonding and strained material layer growth. The method comprises providing a substrate and subjecting the substrate to a mixed plasma treatment, wherein the mixed plasma comprises a reducing gas plasma, in particular H 2 , and an inert gas plasma, in particular Ar and/or He.

IPC 8 full level

H01L 21/306 (2006.01); H01L 21/762 (2006.01)

CPC (source: EP US)

H01L 21/02046 (2013.01 - EP US); H01L 21/02052 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP US)

Citation (search report)

  • [A] EP 1598859 A1 20051123 - TOKYO ELECTRON LTD [JP]
  • [XY] TONG ET AL.: "The role of surface chemistry in bonding of standard silicon wafers", JOURNAL OF THE ELECTROCHEMICAL SOCIETY., vol. 144, no. 1, January 1997 (1997-01-01), ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE., pages 384 - 389, XP002530619
  • [Y] ABBADIE ET AL.: "Low thermal budget surface preparation of Si and SiGe", APPLIED SURFACE SCIENCE, vol. 225, no. 1, January 2004 (2004-01-01), Elsevier, Amsterdam, pages 256 - 266, XP002530620
  • [A] HWANG ET AL: "Mechanism of surface roughness in hydrogen plasma cleaned (100) silicon at low temperatures", JOURNAL OF THE ELECTROCHEMICAL SOCIETY., vol. 144, no. 1, January 1997 (1997-01-01), ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE., pages 335 - 339, XP002530621
  • [A] CHRISTIANSEN S H ET AL: "Strained silicon on insulator (SSOI) by waferbonding", 1 February 2005, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCIENCE PUBLISHERS B.V., BARKING, UK, PAGE(S) 197 - 202, ISSN: 1369-8001, XP004743178

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

Designated extension state (EPC)

AL BA MK RS

DOCDB simple family (publication)

EP 2091070 A1 20090819; CN 101952934 A 20110119; EP 2091074 A1 20090819; JP 2011512040 A 20110414; KR 20100114884 A 20101026; US 2011053342 A1 20110303; US 8062957 B2 20111122; WO 2009101494 A1 20090820

DOCDB simple family (application)

EP 08290138 A 20080213; CN 200980105054 A 20090123; EP 08290533 A 20080610; IB 2009000141 W 20090123; JP 2010546411 A 20090123; KR 20107016195 A 20090123; US 86721709 A 20090123