EP 2091074 A1 20090819 - Method for preparing hydrophobic surfaces
Title (en)
Method for preparing hydrophobic surfaces
Title (de)
Verfahren zur Herstellung von hydrophoben Oberflächen
Title (fr)
Procédé de préparation de surfaces hydrophobes
Publication
Application
Priority
- EP 08290138 A 20080213
- EP 08290533 A 20080610
Abstract (en)
The invention relates to a method for preparing hydrophobic surfaces which find their application in direct silicon bonding and strained material layer growth. The method comprises providing a substrate and subjecting the substrate to a mixed plasma treatment, wherein the mixed plasma comprises a reducing gas plasma, in particular H 2 , and an inert gas plasma, in particular Ar and/or He.
IPC 8 full level
H01L 21/306 (2006.01); H01L 21/762 (2006.01)
CPC (source: EP US)
H01L 21/02046 (2013.01 - EP US); H01L 21/02052 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP US)
Citation (search report)
- [A] EP 1598859 A1 20051123 - TOKYO ELECTRON LTD [JP]
- [XY] TONG ET AL.: "The role of surface chemistry in bonding of standard silicon wafers", JOURNAL OF THE ELECTROCHEMICAL SOCIETY., vol. 144, no. 1, January 1997 (1997-01-01), ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE., pages 384 - 389, XP002530619
- [Y] ABBADIE ET AL.: "Low thermal budget surface preparation of Si and SiGe", APPLIED SURFACE SCIENCE, vol. 225, no. 1, January 2004 (2004-01-01), Elsevier, Amsterdam, pages 256 - 266, XP002530620
- [A] HWANG ET AL: "Mechanism of surface roughness in hydrogen plasma cleaned (100) silicon at low temperatures", JOURNAL OF THE ELECTROCHEMICAL SOCIETY., vol. 144, no. 1, January 1997 (1997-01-01), ELECTROCHEMICAL SOCIETY. MANCHESTER, NEW HAMPSHIRE., pages 335 - 339, XP002530621
- [A] CHRISTIANSEN S H ET AL: "Strained silicon on insulator (SSOI) by waferbonding", 1 February 2005, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ELSEVIER SCIENCE PUBLISHERS B.V., BARKING, UK, PAGE(S) 197 - 202, ISSN: 1369-8001, XP004743178
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
EP 2091070 A1 20090819; CN 101952934 A 20110119; EP 2091074 A1 20090819; JP 2011512040 A 20110414; KR 20100114884 A 20101026; US 2011053342 A1 20110303; US 8062957 B2 20111122; WO 2009101494 A1 20090820
DOCDB simple family (application)
EP 08290138 A 20080213; CN 200980105054 A 20090123; EP 08290533 A 20080610; IB 2009000141 W 20090123; JP 2010546411 A 20090123; KR 20107016195 A 20090123; US 86721709 A 20090123