EP 2092307 A1 20090826 - SEMICONDUCTOR SENSOR DEVICE, DIAGNOSTIC INSTRUMENT COMPRISING SUCH A DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
Title (en)
SEMICONDUCTOR SENSOR DEVICE, DIAGNOSTIC INSTRUMENT COMPRISING SUCH A DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
Title (de)
HALBLEITER-SENSORVORRICHTUNG, DIAGNOSTISCHES GERÄT MIT EINER SOLCHEN VORRICHTUNG UND VERFAHREN ZUR HESTELLUNG EINER SOLCHEN VORRICHTUNG
Title (fr)
DISPOSITIF DE DÉTECTEUR SEMI-CONDUCTEUR, INSTRUMENT DE DIAGNOSTIC COMPRENANT UN TEL DISPOSITIF ET PROCÉDÉ DE FABRICATION D'UN TEL DISPOSITIF
Publication
Application
Priority
- IB 2007054937 W 20071206
- EP 06125723 A 20061208
- EP 07849347 A 20071206
Abstract (en)
[origin: WO2008068721A1] Semiconductor sensor device (10) for sensing a substance (30) comprising a mesa- shaped semiconductor region (11,11') which is formed on a surface of a semiconductor body (12) while a fluid (20) comprising the substance (30) to be sensed can flow along the mesa-shaped semiconductor region (11), wherein the mesa- shaped semiconductor region (11) comprises viewed in a longitudinal direction subsequently a first semiconductor subregion (1) comprising a first semiconductor material, a second semiconductor subregion (2) comprising a second semiconductor material different from the first semiconductor material and a third subregion (3) comprising a third semiconductor material different from the second semiconductor material. According to the invention the first and third semiconductor material comprise an optically passive material and the second semiconductor material comprises an optically active material, the substance (30) to be sensed can change a property of electromagnetic radiation (E) coming from the second subregion (2) and the semiconductor sensor device (10) is formed such that the electromagnetic radiation (E) of which the property has been changed can reach a detector (50). The sensor device (10) according to the invention can be very sensitive, relatively compact and easy to manufacture. The radiation (E) can originate from an external source (40) or can be generated in the device (10).
IPC 8 full level
G01N 21/47 (2006.01); G01N 33/551 (2006.01); G01N 33/552 (2006.01); H01L 29/06 (2006.01); H01L 31/105 (2006.01)
CPC (source: EP)
B82Y 15/00 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); G01N 21/4738 (2013.01)
Citation (search report)
See references of WO 2008068721A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2008068721 A1 20080612; CN 101558290 A 20091014; EP 2092307 A1 20090826; JP 2010511886 A 20100415
DOCDB simple family (application)
IB 2007054937 W 20071206; CN 200780045234 A 20071206; EP 07849347 A 20071206; JP 2009539862 A 20071206