EP 2092352 A1 20090826 - ROGOWSKI SENSOR AND METHOD FOR MEASURING A CURRENT
Title (en)
ROGOWSKI SENSOR AND METHOD FOR MEASURING A CURRENT
Title (de)
ROGOWSKI-SENSOR UND VERFAHREN ZUM MESSEN EINES STROMES
Title (fr)
DÉTECTEUR DE ROGOWSKI ET PROCÉDÉ DE MESURE D'UN COURANT
Publication
Application
Priority
- EP 2007063834 W 20071212
- DE 102006061923 A 20061221
Abstract (en)
[origin: WO2008077798A1] The invention relates, inter alia, to a Rogowski sensor (10) for measuring a current (I1(t)) of an electrical conductor (90), said sensor having a Rogowski coil (20), which has an electrical winding resistor (Rr), and having an integration device which is connected to the Rogowski coil and is intended to generate an output signal (Ua(t)) which is proportional to the electrical current (I1(t)) to be measured by the Rogowski sensor. The invention provides for the integration device to be formed by the winding resistor (Rr) of the Rogowski coil (20) and a capacitance (Ci) which is connected to the two winding connections (50, 60) of the Rogowski coil, and for the output signal from the integration device to be formed by the voltage (Ua(t)) applied to the capacitance (Ci).
IPC 8 full level
G01R 15/18 (2006.01)
CPC (source: EP US)
G01R 15/181 (2013.01 - EP US)
Citation (search report)
See references of WO 2008077798A1
Citation (examination)
- JP 2001242198 A 20010907 - MITSUBISHI ELECTRIC CORP
- US 6614218 B1 20030902 - RAY WILLIAM FREDERICK [GB]
- YU CUNYI ET AL: "The development of the differential loop and Rogowski coil for measuring pulsed power", HIGH-POWER PARTICLE BEAMS, 1990 8TH INTERNATIONAL CONFERENCE ON, IEEE, 2 July 1990 (1990-07-02), pages 815 - 821, XP032292271, ISBN: 978-981-02-0545-4
- ARGÜESO MARTA ET AL: "Implementation of a Rogowski coil for the measurement of partial discharges", REVIEW OF SCIENTIFIC INSTRUMENTS, AIP, MELVILLE, NY, US, vol. 76, no. 6, 23 May 2005 (2005-05-23), pages 65107 - 065107, XP012079522, ISSN: 0034-6748
- KARRER N ET AL: "A NEW CURRENT MEASURING PRINCIPLE FOR POWER ELECTRONIC APPLICATIONS", 11TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S. ISPSD 99. PROCEEDINGS. TORONTO, MAY 26 - 28, 1999; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 26 May 1999 (1999-05-26), pages 279 - 282, XP000903590, ISBN: 978-0-7803-5291-9
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
DE 102006061923 A1 20080703; EP 2092352 A1 20090826; MX 2009006676 A 20090630; US 2010013460 A1 20100121; US 7969139 B2 20110628; WO 2008077798 A1 20080703
DOCDB simple family (application)
DE 102006061923 A 20061221; EP 07848083 A 20071212; EP 2007063834 W 20071212; MX 2009006676 A 20071212; US 51981207 A 20071212