EP 2092562 A2 20090826 - P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC ANTIFUSE AND METHODS OF FORMING THE SAME
Title (en)
P-I-N DIODE CRYSTALLIZED ADJACENT TO A SILICIDE IN SERIES WITH A DIELECTRIC ANTIFUSE AND METHODS OF FORMING THE SAME
Title (de)
AN EIN SILIZID ANGRENZEND KRISTALLISIERTE PIN-DIODE MIT EINER DIELEKTRISCHEN ANTISCHMELZVERBINDUNG UND BILDUNGSVERFAHREN DAFÜR
Title (fr)
DIODE P-I-N CRISTALLISÉE CONTIGUË À UN SILICIURE EN SÉRIE AVEC UN ANTIFUSIBLE DIÉLECTRIQUE ET SON PROCÉDÉ DE FORMATION
Publication
Application
Priority
- US 2007023855 W 20071113
- US 56028306 A 20061115
- US 56028906 A 20061115
Abstract (en)
[origin: WO2008060543A2] A method is described for forming a nonvolatile one-time-programmable memory cell having reduced programming voltage. A contiguous p-i-n diode is paired with a dielectric rupture antifuse formed of a high-dielectric-constant material, having a dielectric constant greater than about 8. In preferred embodiments, the high-dielectric-constant material is formed by atomic layer deposition. The diode is preferably formed of deposited low- defect semiconductor material, crystallized in contact with a suicide. A monolithic three dimensional memory array of such cells can be formed in stacked memory levels above the wafer substrate.
IPC 8 full level
H01L 27/102 (2006.01)
CPC (source: EP KR US)
H01L 29/868 (2013.01 - KR); H10B 20/10 (2023.02 - EP); H10B 20/25 (2023.02 - US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2008060543 A2 20080522; WO 2008060543 A3 20080724; CN 101553925 A 20091007; CN 101553925 B 20130814; EP 2092562 A2 20090826; KR 20090089320 A 20090821
DOCDB simple family (application)
US 2007023855 W 20071113; CN 200780042606 A 20071113; EP 07840040 A 20071113; KR 20097009978 A 20071113