Global Patent Index - EP 2099580 A1

EP 2099580 A1 20090916 - SOLDERING FILLER METAL, ASSEMBLY METHOD FOR SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE

Title (en)

SOLDERING FILLER METAL, ASSEMBLY METHOD FOR SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE

Title (de)

WEICHLOTZUSATZMETALL, ZUSAMMENBAU EINER HALBLEITERANORDNUNG MIT VERWENDUNG DIESES LOT UND HALBLEITERANORDNUNG

Title (fr)

METAL D'APPORT DE SOUDAGE, PROCEDE D'ASSEMBLAGE POUR DISPOSITIF A SEMI-CONDUCTEUR AU MOYEN DU METAL, ET DISPOSITIF A SEMI-CONDUCTEUR

Publication

EP 2099580 A1 20090916 (EN)

Application

EP 03797594 A 20030912

Priority

  • JP 0311730 W 20030912
  • JP 2002273598 A 20020919

Abstract (en)

[origin: WO2004026527A1] In conventional Sn/Sb type brazing filler metals, there are disadvantages that large grains in a beta ' phase are likely to deposit and that cracks are likely to occur in the elements and the bonded portion, and that voids are formed when the above described special coating is provided on the die bonding plane of the semiconductor element. The brazing filler metal of the present invention comprises 5 to 20 weight % of Sb and 0.01 to 5 weight % of Te, with the balance being Sn and incidental impurities, or a brazing filler metal comprises 5 to 20 weight % of Sb, 0.01 to 5 weight % of Te, 0.001 to 0.5 weight % of P, with the balance being Sn and incidental impurities.

IPC 8 full level

B23K 35/26 (2006.01); B23K 35/02 (2006.01); C22C 13/02 (2006.01); H01L 21/52 (2006.01); H05K 3/34 (2006.01)

CPC (source: EP KR)

B23K 35/0227 (2013.01 - EP); B23K 35/26 (2013.01 - KR); B23K 35/262 (2013.01 - EP); C22C 13/02 (2013.01 - EP); H05K 3/34 (2013.01 - KR); B23K 2101/40 (2018.07 - EP); H01L 2224/29 (2013.01 - EP); H01L 2224/29311 (2013.01 - EP); H01L 2924/00013 (2013.01 - EP); H01L 2924/01015 (2013.01 - EP); H01L 2924/01029 (2013.01 - EP); H01L 2924/01051 (2013.01 - EP); H01L 2924/01052 (2013.01 - EP); H01L 2924/01327 (2013.01 - EP); H01L 2924/10253 (2013.01 - EP)

Citation (search report)

See references of WO 2004026527A1

Citation (examination)

JP 2001191196 A 20010717 - TOPY IND

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

WO 2004026527 A1 20040401; AU 2003263597 A1 20040408; CN 100404193 C 20080723; CN 1681620 A 20051012; EP 2099580 A1 20090916; JP 2004106027 A 20040408; JP 4147875 B2 20080910; KR 100595037 B1 20060630; KR 20050057490 A 20050616; TW 200406278 A 20040501; TW I231238 B 20050421

DOCDB simple family (application)

JP 0311730 W 20030912; AU 2003263597 A 20030912; CN 03821944 A 20030912; EP 03797594 A 20030912; JP 2002273598 A 20020919; KR 20057004774 A 20050318; TW 92125309 A 20030915