EP 2104751 A1 20090930 - METHOD FOR THE PRODUCTION OF QUANTUM DOTS EMBEDDED IN A MATRIX, AND QUANTUM DOTS EMBEDDED IN A MATRIX PRODUCED USING THE METHOD
Title (en)
METHOD FOR THE PRODUCTION OF QUANTUM DOTS EMBEDDED IN A MATRIX, AND QUANTUM DOTS EMBEDDED IN A MATRIX PRODUCED USING THE METHOD
Title (de)
VERFAHREN ZUR HERSTELLUNG VON IN EINER MATRIX EINGEBETTETEN QUANTENPUNKTEN UND MIT DEM VERFAHREN HERGESTELLTE IN EINER MATRIX EINGEBETTETE QUANTENPUNKTE
Title (fr)
PROCÉDÉ DE PRÉPARATION DE POINTS QUANTIQUES INCORPORÉS DANS UNE MATRICE ET POINTS QUANTIQUES INCORPORÉS DANS UNE MATRICE ET PRÉPARÉS À L'AIDE DU PROCÉDÉ
Publication
Application
Priority
- DE 2007002230 W 20071211
- DE 102006060366 A 20061216
Abstract (en)
[origin: WO2008074298A1] The depositing of a metallic precursor which is dissolved in a solution containing a polymer onto a substrate by droplet spray distribution is known. A subsequent gas phase reaction with a chalkogen-containing reagent generates quantum dots in a polymer matrix. For generating any polymer-free matrices, the method according to the invention relates to applying the quantum dots (QD) from a precursor (PC) and subsequently bringing into contact the applied quantum dots (QD) and the uncovered substrate (SU) with a gas phase reagent (RG) which contains all of the components of the matrix (MA) which is to be generated, wherein a chemical reaction is brought about between the precursor (PC) and the reagent (RG) by raising the temperature simultaneously with or subsequent to said contact. Thus a composition concording between quantum dots (QD) and matrix (MA) can be generated, wherein the quantum dots (QD) have an additive composition made of the elements of precursor (PC) and reagent (RG), and the matrix (MA) has a composition made exclusively of the elements of the reagent (RG). Binary, ternary, or multinary compound semiconductors can be generated by an appropriate selection of elements and find use in nanooptics and nanoelectronics, and also in solar cells.
IPC 8 full level
C23C 14/00 (2006.01); C23C 14/04 (2006.01); C23C 14/06 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 30/00 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 30/00 (2013.01 - EP US); C23C 8/02 (2013.01 - EP US); C23C 10/02 (2013.01 - EP US); C23C 14/042 (2013.01 - EP US); C23C 14/0623 (2013.01 - EP US); C23C 14/46 (2013.01 - EP US); C23C 16/0281 (2013.01 - EP US); C23C 16/305 (2013.01 - EP US); C23C 26/00 (2013.01 - EP US); H01L 21/02568 (2013.01 - EP US); H01L 21/02614 (2013.01 - EP US); H01L 21/02628 (2013.01 - EP US); H01L 31/0322 (2013.01 - EP US); H01L 31/0352 (2013.01 - EP US); Y02E 10/541 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US)
Citation (search report)
See references of WO 2008074298A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
DE 102006060366 A1 20080619; DE 102006060366 B4 20120816; DE 102006060366 B8 20130801; EP 2104751 A1 20090930; JP 2010513032 A 20100430; US 2010108986 A1 20100506; US 8334154 B2 20121218; WO 2008074298 A1 20080626
DOCDB simple family (application)
DE 102006060366 A 20061216; DE 2007002230 W 20071211; EP 07856081 A 20071211; JP 2009540597 A 20071211; US 51935707 A 20071211