EP 2115788 A2 20091111 - SEMICONDUCTOR DEVICE STRUCTURE
Title (en)
SEMICONDUCTOR DEVICE STRUCTURE
Title (de)
HALBLEITERBAUELEMENTSTRUKTUR
Title (fr)
STRUCTURE DE DISPOSITIF À SEMI-CONDUCTEURS
Publication
Application
Priority
- EP 2008001248 W 20080218
- US 90174707 P 20070216
Abstract (en)
[origin: WO2008098797A2] The semiconductor device structure demonstrates a novel organic device concept, capitalizing on knowledge from both the photovoltaic cell and the field effect transistor. This hybrid "photo gated" detector comprises an inorganic capacitive layer, a molecular sensitizing layer and an organic charge transport layer, caped with in-plane gold electrodes defining an active channel. Under illumination, the sensitizer injects an electron in the capacitive layer, constituted by a wide band gap inorganic oxide of mesoscopic morphology, while the resulting positive charge is transferred to the hole- transporter. The increased hole density results in vastly enhanced film conductivity and charge carrier mobility. Strikingly high light/dark current ratios of up to 10<SUP>6</SUP> at low temperature and 10<SUP>4</SUP> at room temperature are observed corresponding to mobility enhancements of up to 10<SUP>3</SUP>. This not only presents a new method for estimating mobility in organic materials but also offers a broad range of sensing and memory applications.
IPC 8 full level
H01L 31/11 (2006.01); H01L 51/44 (2006.01)
CPC (source: EP)
H01L 31/09 (2013.01); H01L 31/1129 (2013.01)
Citation (search report)
See references of WO 2008098797A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2008098797 A2 20080821; WO 2008098797 A3 20090212; EP 2115788 A2 20091111
DOCDB simple family (application)
EP 2008001248 W 20080218; EP 08715844 A 20080218