EP 2130235 B1 20190306 - LIGHT-EMITTING DIODE CHIP WITH A METAL REFLECTIVE LAYER, THROUGH CONTACT, TUNNEL CONTACT AND A CHARGE CARRIER CONTACT
Title (en)
LIGHT-EMITTING DIODE CHIP WITH A METAL REFLECTIVE LAYER, THROUGH CONTACT, TUNNEL CONTACT AND A CHARGE CARRIER CONTACT
Title (de)
LEUCHTDIODENCHIP MIT METALLISCHER SPIEGELSCHICHT, DURCHKONTAKTIERUNG, TUNNELKONTAKT UND LADUNGSTRÄGERRESERVOIR
Title (fr)
PUCE OPTOÉLECTRONIQUE AVEC UNE COUCHE MÉTALLIQUE RÉFLÉCHISSANTE, CONTACT TRAVERSANT, CONTACT TUNNEL ET CONTACT PORTEUR DE CHARGE
Publication
Application
Priority
- DE 2008000081 W 20080117
- DE 102007003282 A 20070123
Abstract (en)
[origin: WO2008089728A2] The invention relates to a light-emitting diode chip comprising a series of layers (10) provided with at least one n-type conductivity layer. Said light-emitting diode chip comprises a reflective layer that is connected in a conductive manner to the n-type conductivity layer. At least one transparent dielectric layer is arranged between the n-type conductivity layer and the reflective layer.
IPC 8 full level
H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/44 (2010.01)
CPC (source: EP)
H01L 33/145 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/22 (2013.01); H01L 33/44 (2013.01); H01L 2924/0002 (2013.01)
C-Set (source: EP)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
DE 102007003282 A1 20080724; DE 102007003282 B4 20231221; CN 101601141 A 20091209; CN 101601141 B 20130306; EP 2130235 A2 20091209; EP 2130235 B1 20190306; KR 101476863 B1 20141226; KR 101476966 B1 20141224; KR 20090103955 A 20091001; KR 20140108341 A 20140905; TW 200835002 A 20080816; TW I451593 B 20140901; WO 2008089728 A2 20080731; WO 2008089728 A3 20081106
DOCDB simple family (application)
DE 102007003282 A 20070123; CN 200880002993 A 20080117; DE 2008000081 W 20080117; EP 08700869 A 20080117; KR 20097017467 A 20080117; KR 20147022923 A 20080117; TW 97102132 A 20080121