EP 2132359 A2 20091216 - METHOD AND DEVICES FOR THE APPLICATION OF TRANSPARENT SILICON DIOXIDE LAYERS FROM THE GAS PHASE
Title (en)
METHOD AND DEVICES FOR THE APPLICATION OF TRANSPARENT SILICON DIOXIDE LAYERS FROM THE GAS PHASE
Title (de)
VERFAHREN UND VORRICHTUNGEN ZUM AUFBRINGEN VON TRANSPARENTEN SILIZIUMDIOXID-SCHICHTEN AUS DER GASPHASE
Title (fr)
PROCÉDÉ ET DISPOSITIF POUR APPLIQUER DES COUCHES TRANSPARENTES DE DIOXYDE DE SILICIUM EN PHASE GAZEUSE
Publication
Application
Priority
- DE 2008000392 W 20080305
- DE 102007010995 A 20070305
Abstract (en)
[origin: WO2008106955A2] The invention relates to a method and to devices for the application of transparent silicon dioxide layers from the gas phase, wherein precursors are introduced into a furnace by means of a carrier gas, characterized in that a liquid phase process is connected upstream of the gas phase process, wherein for the liquid gas phase a process is used that would run as a quasi sol gel process of base chemicals having silicon up to the creation of a silicon dioxide gel, however, the liquid phase process is interrupted during the beginning of the sol phase in that the reaction mixture evaporates with the precursors present, is mixed with the carrier gas, and transported to the furnace.
IPC 8 full level
C23C 16/40 (2006.01); C23C 16/02 (2006.01)
CPC (source: EP KR US)
C23C 16/24 (2013.01 - KR); C23C 16/40 (2013.01 - KR); C23C 16/402 (2013.01 - EP US); C23C 16/4488 (2013.01 - EP US); C23C 16/452 (2013.01 - KR); Y02T 50/60 (2013.01 - US)
Citation (search report)
See references of WO 2008106955A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
DE 102007010995 A1 20080911; EP 2132359 A2 20091216; JP 2010520371 A 20100610; KR 20090121371 A 20091125; US 2010021632 A1 20100128; WO 2008106955 A2 20080912; WO 2008106955 A3 20081113
DOCDB simple family (application)
DE 102007010995 A 20070305; DE 2008000392 W 20080305; EP 08715541 A 20080305; JP 2009552062 A 20080305; KR 20097020689 A 20080305; US 55410109 A 20090904