EP 2139026 B1 20120530 - REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
Title (en)
REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
Title (de)
REFLEKTIERENDER MASKENROHLING FÜR DIE EUV-LITHOGRAPHIE
Title (fr)
PIECE A MASQUE REFLECHISSANT POUR LITHOGRAPHIE EUV
Publication
Application
Priority
- JP 2008054413 W 20080311
- JP 2007108042 A 20070417
Abstract (en)
[origin: EP2139026A1] Provision of a reflective mask blank for EUV lithography having an absorber layer which has a low reflectance in the wavelength regions of EUV light and pattern inspection light and whose film composition and film thickness are easily controllable to desired ones. A reflective mask blank for EUV lithography, which comprises a substrate, and a reflective layer to reflect EUV light and an absorber layer to absorb EUV light, formed in this order on the substrate, wherein the absorber layer contains tantalum (Ta), boron (B) and silicon (Si), and in the absorber layer, the content of B is at least 1 at.% and less than 5 at.% and the content of Si is from 1 to 25 at.%, and wherein the absorber layer contains no nitrogen (N) or at most 10 at.% of N.
IPC 8 full level
H01L 21/027 (2006.01); G03F 1/24 (2012.01); G03F 1/78 (2012.01)
CPC (source: EP KR US)
B82Y 10/00 (2013.01 - EP KR US); B82Y 40/00 (2013.01 - EP KR US); G03F 1/24 (2013.01 - EP KR US); G03F 1/78 (2013.01 - EP KR US); G03F 7/091 (2013.01 - KR); G03F 7/70008 (2013.01 - KR)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
EP 2139026 A1 20091230; EP 2139026 A4 20100421; EP 2139026 B1 20120530; JP 5040996 B2 20121003; JP WO2008129908 A1 20100722; KR 101409642 B1 20140618; KR 20100014366 A 20100210; TW 200908084 A 20090216; US 2010035165 A1 20100211; US 8088538 B2 20120103; WO 2008129908 A1 20081030
DOCDB simple family (application)
EP 08721829 A 20080311; JP 2008054413 W 20080311; JP 2009510805 A 20080311; KR 20097016134 A 20080311; TW 97112459 A 20080407; US 57864809 A 20091014