EP 2140497 A4 20110921 - CASCODE CIRCUIT EMPLOYING A DEPLETION-MODE, GAN-BASED FET
Title (en)
CASCODE CIRCUIT EMPLOYING A DEPLETION-MODE, GAN-BASED FET
Title (de)
KASKODENSCHALTUNG MIT GAN-BASIERTEM FET MIT VERARMUNGSSCHICHT
Title (fr)
CIRCUIT CASCODE UTILISANT UN TEC À BASE DE GAN À MODE DE DÉPLÉTION
Publication
Application
Priority
- US 2008057593 W 20080320
- US 72576007 A 20070320
Abstract (en)
[origin: WO2008116038A2] A circuit includes an input drain, source and gate nodes. The circuit also includes a group III nitride depletion mode FET having a source, drain and gate, wherein the gate of the depletion mode FET is coupled to a potential that maintains the depletion mode FET in its on-state. In addition, the circuit further includes an enhancement mode FET having a source, drain and gate. The source of the depletion mode FET is serially coupled to the drain of the enhancement mode FET. The drain of the depletion mode FET serves as the input drain node, the source of the enhancement mode FET serves as the input source node and the gate of the enhancement mode FET serves as the input gate node.
IPC 8 full level
H01L 31/0256 (2006.01); H01L 29/78 (2006.01); H03K 19/0948 (2006.01)
CPC (source: EP KR US)
H01L 27/0605 (2013.01 - EP KR US); H01L 27/0883 (2013.01 - KR); H01L 29/2003 (2013.01 - EP KR US); H01L 29/66462 (2013.01 - EP KR US); H01L 29/7786 (2013.01 - EP KR US); H03F 1/226 (2013.01 - EP KR US); H03K 17/567 (2013.01 - EP KR US); H03K 19/09482 (2013.01 - EP KR US); H03K 19/0952 (2013.01 - EP KR US); H01L 27/0883 (2013.01 - EP US); H01L 2924/1033 (2013.01 - KR)
Citation (search report)
- [XY] WO 2006060337 A2 20060608 - SEMISOUTH LAB INC [US], et al
- [YA] US 2007051979 A1 20070308 - KAMBAYASHI HIROSHI [JP], et al
- See references of WO 2008116038A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2008116038 A2 20080925; WO 2008116038 A3 20081120; CN 101689570 A 20100331; CN 101689570 B 20120627; CN 102694013 A 20120926; CN 102694013 B 20150812; EP 2140497 A2 20100106; EP 2140497 A4 20110921; HK 1142996 A1 20101217; JP 2010522432 A 20100701; JP 2014209659 A 20141106; JP 5580602 B2 20140827; KR 101497725 B1 20150304; KR 20100015747 A 20100212; US 2008230784 A1 20080925; US 7501670 B2 20090310
DOCDB simple family (application)
US 2008057593 W 20080320; CN 200880009064 A 20080320; CN 201210189604 A 20080320; EP 08744097 A 20080320; HK 10109342 A 20100929; JP 2009554725 A 20080320; JP 2014142832 A 20140711; KR 20097021925 A 20080320; US 72576007 A 20070320