EP 2143810 A1 20100113 - COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME
Title (en)
COPPER ALLOY FOR ELECTRICAL/ELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME
Title (de)
KUPFERLEGIERUNG FÜR ELEKTRISCHE/ELEKTRONISCHE VORRICHTUNG UND HERSTELLUNGSVERFAHREN DAFÜR
Title (fr)
ALLIAGE DE CUIVRE POUR UN DISPOSITIF ÉLECTRIQUE/ÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION
Publication
Application
Priority
- JP 2008055785 W 20080326
- JP 2007080266 A 20070326
- JP 2008079256 A 20080325
Abstract (en)
A copper alloy for an electrical and electronic device in accordance with the present invention is characterized in that the copper alloy for an electrical and electronic device includes: nickel (Ni) between 1.5 mass% and 5.0 mass%; silicon (Si) between 0.4 mass% and 1.5 mass%; and a remaining portion formed of Cu and an unavoidable impurity, wherein a mass ratio between Nickel (Ni) and Silicon (Si) as Ni/Si is not smaller than two and not larger than seven, an average crystalline grain diameter is not smaller than 2 µm and not larger than 20 µm, and a standard deviation of the crystalline grain diameter is not larger than 10 µm.
IPC 8 full level
B03C 5/00 (2006.01); C22C 9/06 (2006.01); C22F 1/00 (2006.01); C22F 1/08 (2006.01)
CPC (source: EP US)
B03C 5/005 (2013.01 - EP US); B03C 5/022 (2013.01 - EP US); C22C 9/00 (2013.01 - EP US); C22C 9/06 (2013.01 - EP US); C22F 1/00 (2013.01 - EP US); C22F 1/08 (2013.01 - EP US); H01R 13/03 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
EP 2143810 A1 20100113; EP 2143810 A4 20120627; CN 101680057 A 20100324; JP 2008266783 A 20081106; JP 5170881 B2 20130327; US 2010193092 A1 20100805; WO 2008126681 A1 20081023
DOCDB simple family (application)
EP 08722882 A 20080326; CN 200880017586 A 20080326; JP 2008055785 W 20080326; JP 2008079256 A 20080325; US 59302408 A 20080326