EP 2150491 A4 20111130 - DEPOSITION OF HIGH-PURITY SILICON VIA HIGH-SURFACE AREA GAS-SOLID OR GAS-LIQUID INTERFACES AND RECOVERY VIA LIQUED PHASE
Title (en)
DEPOSITION OF HIGH-PURITY SILICON VIA HIGH-SURFACE AREA GAS-SOLID OR GAS-LIQUID INTERFACES AND RECOVERY VIA LIQUED PHASE
Title (de)
ABSCHEIDUNG VON HOCHREINEM SILICIUM DURCH GAS-FESTSTOFF- ODER GAS-FLÜSSIGKEITS-SCHNITTSTELLEN MIT GROSSEM OBERFLÄCHENBEREICH UND WIEDERHERSTELLUNG DURCH EINE FLÜSSIGPHASE
Title (fr)
DÉPOSITION D'UN SILICIUM DE PURETÉ ÉLEVÉE PAR INTERFACES GAZ-SOLIDE OU GAZ-LIQUIDE À AIRE SPÉCIFIQUE ÉLEVÉE ET RÉCUPÉRATION EN PHASE LIQUIDE
Publication
Application
Priority
- US 2008061651 W 20080425
- US 91399707 P 20070425
Abstract (en)
[origin: WO2008134568A2] Solid silicon is deposited onto electrically heated deposition plates by the reduction reaction of gaseous thchlorosilane and hydrogen which are mixed and pumped across the surfaces of the plates. The plates can have a number of high-surface area geometries such as concentric cylinders, spirals, or repeating S-shapes. Once the desired amount of silicon has been deposited, the deposition plates are heated to above the melting point of silicon causing the deposited silicon to slide off the plates in the form of a crust due to gravitational force. The plates are left coated with a thin film of liquid silicon which contains any impurities leached from the plates. This film is melted off separately from the main silicon crust to avoid contamination of the latter and the plates are then ready for the next deposition cycle.
IPC 8 full level
C01B 33/03 (2006.01); C01B 33/035 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP US)
C01B 33/023 (2013.01 - US); C01B 33/03 (2013.01 - EP US); C01B 33/035 (2013.01 - EP US); C30B 15/14 (2013.01 - US)
Citation (search report)
- [XA] US 4981102 A 19910101 - GAUTREAUX MARCELIAN F [US], et al
- [A] US 4590024 A 19860520 - LESK ISRAEL A [US], et al
- See references of WO 2008134568A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2008134568 A2 20081106; WO 2008134568 A3 20090115; CN 101707871 A 20100512; CN 101707871 B 20130612; CN 103351000 A 20131016; EP 2150491 A2 20100210; EP 2150491 A4 20111130; JP 2010524842 A 20100722; JP 2014148460 A 20140821; JP 5530351 B2 20140625; US 2010086466 A1 20100408; US 2014102356 A1 20140417; US 8449940 B2 20130528
DOCDB simple family (application)
US 2008061651 W 20080425; CN 200880013726 A 20080425; CN 201310182412 A 20080425; EP 08795821 A 20080425; JP 2010506540 A 20080425; JP 2014034905 A 20140226; US 201313904004 A 20130528; US 59715108 A 20080425