Global Patent Index - EP 2153454 A4

EP 2153454 A4 20110223 - ARRAYS OF MICROCAVITY PLASMA DEVICES AND ELECTRODES WITH REDUCED MECHANICAL STRESS

Title (en)

ARRAYS OF MICROCAVITY PLASMA DEVICES AND ELECTRODES WITH REDUCED MECHANICAL STRESS

Title (de)

ARRAYS VON MIKROKAVITÄTS-PLASMAGERÄTEN UND ELEKTRODEN MIT REDUZIERTER MECHANISCHER BELASTUNG

Title (fr)

RÉSEAU DE DISPOSITIFS DE PLASMA À MICROCAVITÉ ET ÉLECTRODES À CONTRAINTE MÉCANIQUE RÉDUITE

Publication

EP 2153454 A4 20110223 (EN)

Application

EP 08779623 A 20080515

Priority

  • US 2008006226 W 20080515
  • US 93039307 P 20070516

Abstract (en)

[origin: WO2008153663A1] An array of microcavity plasma devices include a plurality of thin metal first electrodes and stress reduction structures and/or geometries designed to promote the flatness during and after processing. The first electrodes are buried in a thin metal oxide layer which protects the electrodes from the plasma in the microcavities. In embodiments of the invention, some or all of the electrodes are connected. Patterns of connections in a one- or two- dimensional array of microcavities can be defined. The first electrodes comprise circumferential electrodes that surround individual microcavities. A second thin layer having a buried, second electrode is bonded to the first thin layer. A packaging layer seals the discharge medium into the microcavities. In a preferred methods of formation of arrays of microcavity plasma devices or electrodes, a thin metal foil or film is symmetrically anodized and formed with a stress reduction geometry and/or structures.

IPC 8 full level

C25D 11/04 (2006.01); H01J 17/04 (2012.01); H01J 17/16 (2012.01); H01J 17/49 (2012.01)

CPC (source: EP US)

C25D 11/26 (2013.01 - EP US); H01J 11/18 (2013.01 - EP US)

Citation (search report)

  • [X] US 5194136 A 19930316 - JEUNG SEHUN [US], et al
  • [X] US 2006180474 A1 20060817 - FUJIMOTO KAZUMASA [JP], et al
  • [X] US 3551303 A 19701229 - SUZUKI TAKASHI, et al
  • [XY] WO 2007011865 A2 20070125 - UNIV ILLINOIS [US], et al
  • [A] JP 2005256071 A 20050922 - NIIMIYABARA SHOZO
  • [Y] GB 2012305 A 19790725 - FUJI PHOTO FILM CO LTD
  • [Y] JP 2004211116 A 20040729 - KURODA SEIKI SEISAKUSHO KK, et al
  • [XDP] WO 2008013820 A2 20080131 - UNIV ILLINOIS [US], et al
  • [XI] PARK S-J ET AL: "Nanoporous alumina as a dielectric for microcavity plasma devices: Multilayer Al/Al2O3 structures", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 86, no. 22, 24 May 2005 (2005-05-24), pages 221501 - 221501, XP012065703, ISSN: 0003-6951, DOI: 10.1063/1.1923747
  • [XI] PARK S-J ET AL: "Ultraviolet emission intensity, visible luminance, and electrical characteristics of small arrays of Al/Al2O3 microcavity plasma devices operating in Ar/N2 or Ne at high-power loadings", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 99, no. 2, 26 January 2006 (2006-01-26), pages 26107 - 026107, XP012083685, ISSN: 0021-8979
  • See references of WO 2008153663A1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2008153663 A1 20081218; EP 2153454 A1 20100217; EP 2153454 A4 20110223; EP 2153454 B1 20130424; JP 2010527502 A 20100812; JP 5318857 B2 20131016; US 2010001629 A1 20100107; US 2012178335 A1 20120712; US 8159134 B2 20120417; US 8535110 B2 20130917

DOCDB simple family (application)

US 2008006226 W 20080515; EP 08779623 A 20080515; JP 2010508425 A 20080515; US 15255008 A 20080515; US 201213425214 A 20120320