EP 2154257 A1 20100217 - CU-NI-SI-BASED ALLOY FOR ELECTRONIC MATERIAL
Title (en)
CU-NI-SI-BASED ALLOY FOR ELECTRONIC MATERIAL
Title (de)
LEGIERUNG AUF CU-NI-SI-BASIS FÜR ELEKTRONISCHES MATERIAL
Title (fr)
ALLIAGE À BASE DE CU-NI-SI POUR UN MATÉRIAU ÉLECTRONIQUE
Publication
Application
Priority
- JP 2008056138 W 20080328
- JP 2007094441 A 20070330
Abstract (en)
An object of the present invention is to provide a Corson alloy having significantly improved characteristics, i.e. high strength and high electrical conductivity, by enhancing the effect of addition of Cr to a Cu-Ni-Si system alloy. There is provided a copper alloy for electronic materials comprising 1.0-4.5% by mass Ni, 0.50-1.2% by mass Si, 0.003-0.3% by mass Cr wherein the weight ratio of Ni to Si satisfies the expression: 3‰¤Ni/Si‰¤5.5, and the balance being Cu and incidental impurities, wherein particles of Cr-Si compounds having a size of 0.1 µm to 5 µm are dispersed in the alloy and the dispersed particles having an atomic concentration ratio of Cr to Si of 1 to 5 and a dispersion density of no more than 1×10 6 /mm 2 .
IPC 8 full level
C22C 9/06 (2006.01); C22C 9/00 (2006.01); C22C 9/01 (2006.01); C22C 9/02 (2006.01); C22C 9/04 (2006.01); C22C 9/05 (2006.01); C22C 9/10 (2006.01); C22F 1/00 (2006.01); C22F 1/02 (2006.01); C22F 1/08 (2006.01); H01B 1/02 (2006.01); H01B 5/02 (2006.01)
CPC (source: EP KR US)
C22C 9/06 (2013.01 - EP KR US); C22F 1/00 (2013.01 - EP US); C22F 1/02 (2013.01 - EP US); C22F 1/08 (2013.01 - EP KR US); H01B 1/02 (2013.01 - KR); H01B 1/026 (2013.01 - EP US); H01B 5/02 (2013.01 - KR)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
EP 2154257 A1 20100217; EP 2154257 A4 20120111; EP 2154257 B1 20161005; CN 101646792 A 20100210; CN 101646792 B 20120222; JP 4418028 B2 20100217; JP WO2008123433 A1 20100715; KR 101211984 B1 20121213; KR 20090123017 A 20091201; TW 200902732 A 20090116; TW I395824 B 20130511; US 2010086435 A1 20100408; WO 2008123433 A1 20081016
DOCDB simple family (application)
EP 08739256 A 20080328; CN 200880010189 A 20080328; JP 2008056138 W 20080328; JP 2009509224 A 20080328; KR 20097022449 A 20080328; TW 97111276 A 20080328; US 53292908 A 20080328