EP 2160928 A2 20100310 - SYSTEM AND METHOD FOR RECORDING THE CHARACTERISTIC CURVES OF LIGHT-EMITTING DIODES
Title (en)
SYSTEM AND METHOD FOR RECORDING THE CHARACTERISTIC CURVES OF LIGHT-EMITTING DIODES
Title (de)
SYSTEM UND VERFAHREN ZUR ERFASSUNG DER KENNLINIEN VON LEUCHTDIODEN (LEDS)
Title (fr)
SYSTÈME ET PROCÉDÉ D'ENREGISTREMENT DES CARACTÉRISTIQUES DE DIODES ÉLECTROLUMINESCENTES (LED)
Publication
Application
Priority
- EP 2008005002 W 20080620
- DE 102007029123 A 20070625
Abstract (en)
[origin: WO2009000475A2] The invention relates to a system for recording characteristic curves for a light-emitting diode arrangement (1) comprising at least one light-emitting diode (2). A control unit (4) is used to operate the light-emitting diode arrangement (1) and to record the diode current (8) and the voltage (9) on the light-emitting diode arrangement (1). The control unit (4) is also used to record a first current/voltage pair (P1) and a different second current/voltage pair (P2), at a first temperature of the light-emitting diode arrangement (1), and a third current/voltage pair (P3) and a different fourth current/voltage pair (P4), at a second temperature of the light-emitting diode arrangement (1). The invention also relates to a method for recording characteristic curves of a light-emitting diode arrangement.
IPC 8 full level
H05B 44/00 (2022.01); G01R 31/26 (2006.01)
CPC (source: AT EP US)
G01R 31/2635 (2013.01 - AT EP US); H05B 45/10 (2020.01 - AT); H05B 45/14 (2020.01 - AT EP US); H05B 45/18 (2020.01 - EP US); H05B 45/28 (2020.01 - EP US)
Citation (search report)
See references of WO 2009000475A2
Citation (examination)
- US 2006016959 A1 20060126 - NISHIMURA KEN A [US]
- ELECTRONIC INDUSTRIES ASSOCIATION-ENGINEERING DEPARTMENT: "EIA/JESD51-1 Integrated Circuits Thermal Measurement Method - Electrical Test Method (Single Semiconductor Device)", EIA/JESD51-1, ELECTRONIC INDUSTRIES ALLIANCE, ARLINGTON, VA, USA, 1 December 1995 (1995-12-01), pages 1 - 33, XP002550746
- JIANG ET AL: "Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate", JOURNAL OF LUMINESCENCE, vol. 122-123, 6 December 2006 (2006-12-06), ELSEVIER BV NORTH-HOLLAND, NL, pages 693 - 695, XP005768050, ISSN: 0022-2313, DOI: 10.1016/J.JLUMIN.2006.01.262
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MT NL NO PL PT RO SE SI SK TR
Designated extension state (EPC)
AL BA MK RS
DOCDB simple family (publication)
DE 102007029123 A1 20090102; AT 516702 A5 20160815; AT 516702 B1 20160815; CN 101743780 A 20100616; EP 2160928 A2 20100310; US 2012139544 A1 20120607; US 8471564 B2 20130625; WO 2009000475 A2 20081231; WO 2009000475 A3 20091210
DOCDB simple family (application)
DE 102007029123 A 20070625; AT 92102008 A 20080620; CN 200880021831 A 20080620; EP 08773553 A 20080620; EP 2008005002 W 20080620; US 66511708 A 20080620